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onsemi PNP Transistor 1 A, 350 V, 3-Pin TO-220 Package, Through Hole MJE5731G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 15.75mm |
| Length | 10.28mm |
| Model | MJE5731G |
| Width | 4.82mm |
| Mount Type | Through Hole |
| Series | MJE5731 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | -350V |
| Minimum DC Current Gain hFE | 10 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 350V dc |
| Maximum Power Dissipation Pd | 40W |
| Maximum DC Collector Current Idc | -1A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 2MHz |
| onsemi MJE15035G Transistor, -4 A PNP, -350 V, 3-Pin TO-220Brand | onsemi |
Key Features
- Through hole mount type designed for ease of use in PCB assemblies.
- Maximum power dissipation of 40 watts suitable for high power applications.
- Wide operating temperature range from -65°C to 150°C for robust performance.
- Single transistor configuration with PNP polarity for complementary circuit designs.
- Offers a minimum DC current gain (hFE) of 10 ensuring reliable switching performance.
- Maximum transition frequency of 2 MHz supporting medium frequency applications.
- Compact dimensions of 15.75 mm height, 10.28 mm length, and 4.82 mm width.
- Compatible with automotive-grade requirements except it is not automotive qualified.
Product Description
The onsemi MJE5731G is a high-voltage PNP transistor designed to handle up to 1 ampere of collector current and sustain collector-emitter voltages up to 350 volts. Packaged in the standard 3-pin TO-220 form factor, it supports through-hole mounting, making it versatile for various electronic circuit boards.
This transistor features a maximum power dissipation rating of 40 watts, allowing it to function effectively in power regulation and amplification circuits. Its operating temperature range spans from a low of -65°C up to 150°C, ensuring durability in demanding environments.
Designed as a single PNP transistor, the MJE5731G offers a minimum DC current gain (hFE) of 10 and a maximum transition frequency of 2 MHz, making it suitable for medium-frequency switching applications in power supplies, amplifiers, and industrial control circuits.
Its compact dimensions contribute to ease of integration in space-constrained designs, with a height of 15.75 mm, length of 10.28 mm, and width of 4.82 mm. Although it is not qualified to automotive standards, it maintains robust electrical parameters for general industrial and consumer electronics.
Through hole mount type designed for ease of use in PCB assemblies. Maximum power dissipation of 40 watts suitable for high power applications. Wide operating temperature range from -65°C to 150°C for robust performance.
Single transistor configuration with PNP polarity for complementary circuit designs. Offers a minimum DC current gain (hFE) of 10 ensuring reliable switching performance. Maximum transition frequency of 2 MHz supporting medium frequency applications.
Compact dimensions of 15.75 mm height, 10.28 mm length, and 4.82 mm width. Compatible with automotive-grade requirements except it is not automotive qualified. This transistor is ideal for industrial, laboratory, and general-purpose electronic applications requiring dependable PNP transistor switching or amplification.
Explore more transistor and semiconductor components through EnvMart's extensive catalog to find complementary devices suitable for your project's requirements.
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Frequently Asked Questions
The maximum collector-emitter voltage (Vceo) for the MJE5731G is 350 volts.
This model has a maximum power dissipation rating of 40 watts, making it suitable for high power applications.
The MJE5731G offers a minimum DC current gain (hFE) of 10, ensuring reliable switching performance.
It operates within a temperature range from -65°C to 150°C, which allows it to function in demanding environments.
The maximum transition frequency for the MJE5731G is 2 MHz, supporting medium frequency applications.
This transistor has compact dimensions of 15.75 mm in height, 10.28 mm in length, and 4.82 mm in width.
The MJE5731G is designed for through-hole mounting, making it easy to use in PCB assemblies.
The maximum DC collector current (Idc) for the MJE5731G is 1 ampere.
While it is compatible with automotive-grade requirements, the MJE5731G is not automotive qualified.
This transistor is packaged in a standard 3-pin TO-220 form factor.
The MJE5731G is a single transistor configuration with PNP polarity, suitable for complementary circuit designs.
The maximum emitter-base voltage (VEBO) for the MJE5731G is 5 volts.
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