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ROHM Type P-Channel Power MOSFET, 14 A, 30 V Enhancement Mode, 8-Pin SOP Package RRH140P03GZETB
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Height | 1.6mm |
| Length | 5.2mm |
| Model | RRH140P03GZETB |
| Width | 4.05mm |
| Mount Type | Surface |
| Series | RRH140P03 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOP |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | JEITA ED-4701/302, JEDEC JESD22-A114, JEDEC JESD22-C101 |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 14A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 10.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2W |
| Typical Gate Charge Qg @ Vgs | 9.2nC |
| Maximum Gate Source Voltage Vgs | -1V |
| Forward Voltage Vf | -1.2V |
Key Features
- Features an 8-pin SOP surface mount package for compact PCB design.
- Enhancement mode channel with low ON-resistance of 10.5 milliohm for high efficiency.
- Supports maximum power dissipation of 2 W ensuring reliable operation.
- Operates reliably between -55°C and 150°C for extended temperature range.
- Typical gate charge is low at 9.2 nC enabling fast switching speeds.
- Complies with JEITA and JEDEC standards for quality and safety.
- Designed for use in power management and switching applications in electronics and industrial equipment.
- Forward voltage rated at -1.2 V suitable for P-channel MOSFET characteristics.
Product Description
ROHM RRH140P03GZETB Type P-Channel Power MOSFET provides robust performance in power switching and management applications. It features a maximum continuous drain current of 14 A and a drain-source voltage rating of 30 V, making it suitable for medium power electronic circuits.
This MOSFET is housed in an 8-pin SOP surface mount package that supports efficient board layout and thermal management. The device employs enhancement mode channel technology, ensuring low ON-resistance at 10.5 milliohm, which contributes to higher operational efficiency and reduced heat generation.
The maximum power dissipation of 2 W allows stable operation under typical industrial and commercial conditions. The operating temperature range from -55°C to 150°C makes this MOSFET well suited for applications exposed to wide thermal environments in industrial electronics, embedded systems, and automotive circuits.
Its typical gate charge of 9.2 nC enables fast switching speeds appropriate for dynamic power control systems. The forward voltage of -1.2 V is consistent with P-channel MOSFET characteristics, useful in complementary switching circuits and power management modules.
The RRH140P03GZETB complies with JEITA ED-4701/302 and JEDEC JESD22 standards, assuring users of its manufacturing quality and electromagnetic compatibility. 8-Pin SOP surface mount package for space-saving and easy assembly.
Low ON-resistance of 10.5 milliohm for improved energy efficiency. Wide operating temperature range (-55°C to 150°C) suitable for harsh conditions. High switching speeds with typical gate charge of 9.2 nC. Maximum power dissipation of 2 W for reliable performance.
Compliant with JEITA and JEDEC standards ensuring quality and reliability. Forward voltage of -1.2 V compatible with P-channel MOSFET operation. Compact package dimensions facilitating efficient PCB design.
Ideal for use in electronic power management, industrial control systems, and other applications requiring efficient switching devices with robust electrical and thermal specifications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 14 A.
This MOSFET has a maximum drain-source voltage rating of 30 V.
It features a low ON-resistance of 10.5 milliohm, contributing to high efficiency.
The typical gate charge is 9.2 nC, enabling fast switching speeds.
It operates reliably between -55°C and 150°C, making it suitable for harsh environments.
The package dimensions are 5.2 mm in length, 4.05 mm in width, and 1.6 mm in height.
This model is housed in an 8-pin SOP surface mount package.
The maximum power dissipation for this MOSFET is 2 W.
It complies with JEITA ED-4701/302 and JEDEC JESD22 standards, ensuring quality and reliability.
The forward voltage is rated at -1.2 V, suitable for P-channel characteristics.
It is a Type P-channel MOSFET, designed for enhancement mode operation.
It is designed for power management and switching applications in electronics and industrial equipment.
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