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ROHM MOSFET Type P-Channel Enhancement Mode, 3.5 A, 20 V, TSMT-3 Package RQ5C035BCTCL

Category MOSFET Brand ROHM Condition New

Specifications

Country of Origin India
Brand ROHM
Height 0.95mm
Length 3mm
Model RQ5C035BCTCL
Width 1.8mm
Mount Type Surface
Series RQ5C035BC
Maximum Operating Temperature 150°C
Package Type TSMT-3
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type P
Maximum Continuous Drain Current Id 3.5A
Maximum Drain Source Voltage Vds 20V
Maximum Drain Source Resistance Rds 135mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 1W
Typical Gate Charge Qg @ Vgs 6.5nC
Maximum Gate Source Voltage Vgs 12V
Forward Voltage Vf -1.2V

Key Features

  • Features a low on-resistance of 135 milliohms for efficient switching.
  • Packaged in a compact TSMT-3 surface-mount package suitable for space-constrained applications.
  • Operates reliably within a temperature range of -55°C to 150°C.
  • Designed for enhancement mode operation with a maximum gate-source voltage of 12 V.
  • Typical gate charge is 6.5 nanocoulombs at Vgs, enabling fast switching times.
  • Forward voltage rating of -1.2 V enhances efficient current flow.
  • Maximum power dissipation rated at 1 watt ensures robust thermal handling.
  • Ideal for use as load switches in electronic circuits.

Product Description

ROHM RQ5C035BCTCL is a Type P-Channel enhancement mode MOSFET optimized for compact, surface mount applications. It supports a continuous drain current of 3.5 A and a maximum drain-source voltage of 20 V. The device is housed in a low-profile TSMT-3 package, measuring 3 mm in length, 1.8 mm in width, and 0.95 mm in height, making it ideal for designs with limited space.

This MOSFET features a low on-resistance of 135 milliohms, which reduces power loss and improves efficiency in switching applications. Its typical gate charge of 6.5 nC allows for rapid switching performance with a maximum gate-source voltage tolerance of 12 V. The device exhibits a forward voltage of -1.2 V and can dissipate up to 1 watt of power under normal operating conditions.

The operating temperature range extends from -55°C to 150°C, ensuring reliable performance in various industrial and commercial electronics environments. This product is Pb-free with halogen-free lead plating, supporting environmental compliance.

Common applications include use as load switches in electronic circuits within consumer electronics, automotive electronics, industrial control systems, and other embedded device solutions. The surface mount design facilitates automated assembly and integration onto printed circuit boards.

Low on-resistance for efficient switching. Compact TSMT-3 surface mount package. Wide operating temperature range from -55°C to 150°C. Suitable for load switch applications. Pb-free and halogen-free plating. Explore more semiconductor devices and MOSFET solutions in the ROHM product range on EnvMart for your industrial and commercial electronic design needs.

ROHM MOSFET Type P-Channel Enhancement Mode, 3.5 A, 20 V, TSMT-3 Package RQ5C035BCTCL
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Frequently Asked Questions

The maximum continuous drain current of this model is 3.5 A.

This MOSFET has a maximum drain-source voltage of 20 V.

It features a low on-resistance of 135 milliohms, which helps improve efficiency in switching applications.

The typical gate charge for this model is 6.5 nanocoulombs at Vgs.

It operates reliably within a temperature range of -55°C to 150°C.

The TSMT-3 package measures 3 mm in length, 1.8 mm in width, and 0.95 mm in height.

The maximum power dissipation for this MOSFET is rated at 1 watt.

The maximum gate-source voltage tolerated by this model is 12 V.

Common applications include use as load switches in consumer electronics, automotive electronics, and industrial control systems.

The forward voltage rating is -1.2 V, which enhances efficient current flow.

This model has a pin count of 3.

Yes, it features Pb-free and halogen-free plating, supporting environmental compliance.

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