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onsemi General Purpose PNP Transistor SOT-23 Package, -40 V Collector Emitter Voltage, -2 A Collector Current NSV40200LT1G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.11mm
Length 3.04mm
Model NSV40200LT1G
Width 2.64mm
Mount Type Surface
Series NSV40200L
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -40V dc
Minimum DC Current Gain hFE 150
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -7V
Maximum Collector Base Voltage VCBO 40V dc
Maximum Power Dissipation Pd 460mW
Maximum DC Collector Current Idc -2A
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • Designed for surface mount applications with 3 pins.
  • Delivers a maximum power dissipation of 460 mW.
  • Offers a minimum DC current gain (hFE) of 150.
  • Supports a maximum transition frequency of 100 MHz.
  • Operates within a temperature range from -55°C to 150°C.
  • Single transistor configuration with PNP polarity.
  • Maximum collector base voltage of 40 V dc and emitter base voltage of -7 V.
  • Meets automotive-grade standards for reliable applications.

Product Description

onsemi NSV40200LT1G is a high-quality, general purpose PNP bipolar transistor housed in a compact 3-Pin SOT-23 surface mount package. It features a maximum DC collector current rating of -2 amperes and a collector emitter voltage of -40 volts DC, making it suitable for a wide range of electronic and power applications.

With a maximum power dissipation of 460 milliwatts, this transistor maintains efficient heat management in compact circuits. It offers a minimum DC current gain (hFE) of 150 and a maximum transition frequency of 100 MHz, ensuring effective amplification and switching performance in both industrial and consumer electronics.

The transistor is designed to operate over a broad temperature range, from -55°C to 150°C, meeting the demands of automotive and industrial environments. Its small footprint with dimensions of 3.04 mm length, 2.64 mm width, and 1.11 mm height enables high-density mounting on printed circuit boards (PCBs).

This single-configuration PNP transistor protects circuits with a maximum collector base voltage rating of 40 V and an emitter base voltage of -7 V. The NSV40200LT1G is ideal for use in telecommunications, power management, signal amplification, and general electronic circuit design.

Designed for surface mount applications with 3 pins. Delivers a maximum power dissipation of 460 mW. Offers a minimum DC current gain (hFE) of 150. Supports a maximum transition frequency of 100 MHz. Operates within a temperature range from -55°C to 150°C.

Compact dimensions: 3.04mm length, 2.64mm width, and 1.11mm height. Single transistor configuration with PNP polarity. Maximum collector base voltage of 40 V dc and emitter base voltage of -7 V. Meets automotive-grade standards for reliable applications.

Widely used in electronic circuits requiring robust PNP bipolar transistors.

onsemi components are engineered to deliver reliable performance in critical industrial, automotive, and consumer electronics applications. This transistor supports design innovation and efficient production in electronics manufacturing.

Explore more Bipolar Transistors and semiconductor devices in the Electronics & Electricals category at EnvMart to find quality components for your project needs.

onsemi General Purpose PNP Transistor SOT-23 Package, -40 V Collector Emitter Voltage, -2 A Collector Current NSV40200LT1G
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Frequently Asked Questions

The maximum collector emitter voltage for the NSV40200LT1G is -40 V dc.

This model has a maximum power dissipation of 460 mW.

The minimum DC current gain (hFE) for this transistor is 150.

It supports a maximum transition frequency of 100 MHz.

This transistor operates within a temperature range from -55°C to 150°C.

The dimensions of the SOT-23 package are 3.04 mm in length, 2.64 mm in width, and 1.11 mm in height.

The maximum DC collector current rating is -2 A.

It supports surface mount applications with a 3-pin configuration.

The maximum emitter base voltage (VEBO) is -7 V.

This model has a PNP polarity configuration.

It is suitable for telecommunications, power management, signal amplification, and general electronic circuit design.

The country of origin for this transistor is India.

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