onsemi PNP Transistor, 2 A Collector Current, 40 V DC Collector-Emitter Voltage, 3-Pin SOT-23 Package NSV40200LT1G

onsemi NSV40200LT1G is a general purpose PNP bipolar transistor designed for discrete semiconductor applications, featuring a maximum DC collector current of 2 A and a collector-emitter voltage of 40 V DC, in a compact 3-pin SOT-23 surface-mount package. It offers reliable performance in power and signal amplification within electronic circuits in Industrial, Electronic Component, and Semiconductor manufacturing contexts.

This transistor supports a maximum power dissipation of 460 mW, making it suitable for moderate power applications, and includes a high DC current gain (hFE) of at least 150, ensuring efficient signal amplification. The device operates over a wide temperature range from -55°C to 150°C, enabling use in harsh environments and applications requiring thermal stability.

The maximum transition frequency of 100 MHz enables operation in high-frequency switching and signal processing circuits. Its physical package dimensions of 3.04 mm length, 2.64 mm width, and 1.11 mm height facilitate space-saving PCB designs.

This transistor is ideal for use in industrial electronics, consumer devices, power management modules, and other electronic components where compact size and efficient switching performance are required.

Maximum DC collector current: 2 A. Collector-emitter voltage: 40 V DC. Power dissipation: 460 mW. Package: 3-pin SOT-23 surface mount. High DC current gain (hFE): minimum 150. Operating temperature range: -55°C to 150°C.

Transition frequency: 100 MHz. Pin count: 3. Physical dimensions: Length 3.04 mm, Width 2.64 mm, Height 1.11 mm. General purpose PNP bipolar transistor for electronic applications. Explore more bipolar transistor components and semiconductors at EnvMart for your industrial, manufacturing, or electronic design needs.

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