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onsemi Small Signal NPN Transistor, 500 mA DC Collector Current, 60 V Collector Emitter Voltage, 225 mW Power MMBTA05LT3G

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onsemi Small Signal NPN Transistor, 500 mA DC Collector Current, 60 V Collector Emitter Voltage, 225 mW Power MMBTA05LT3G

Name: onsemi Small Signal NPN Transistor, 500 mA DC Collector Current, 60 V Collector Emitter Voltage, 225 mW Power MMBTA05LT3G
Brand: onsemi
SKU: 233990
Price: 0.06 USD
Availability: InStock

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Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1.11mm
Length	3.04mm
Model	MMBTA05LT3G
Width	2.64mm
Mount Type	Surface
Series	MMBTA05L
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	60V dc
Minimum DC Current Gain hFE	100
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	4V
Maximum Collector Base Voltage VCBO	60V dc
Maximum Power Dissipation Pd	225mW
Maximum DC Collector Current Idc	500mA
Transistor Configuration	Single
Maximum Transition Frequency ft	100MHz

Key Features

Compact 3-pin SOT-23 surface-mount package suitable for space-constrained PCB designs.
Maximum power dissipation of 225 milliwatts allows moderate power applications.
High minimum DC current gain (hFE) of 100 ensures efficient amplification.
Wide operating temperature range from -55°C to 150°C for robust environmental tolerance.
Supports frequencies up to 100 MHz for high-speed switching applications.
Single transistor configuration with NPN polarity for general purpose usage.
Maximum collector-base voltage rated at 60 V and emitter-base voltage of 4 V.
Designed primarily for small signal amplification in electronic circuits.

Product Description

onsemi MMBTA05LT3G is a small signal NPN bipolar transistor designed to handle a maximum DC collector current of 500 milliamperes and withstand a maximum collector emitter voltage of 60 volts DC. Packaged in a compact 3-pin SOT-23 surface-mount form factor, it is suitable for modern electronic assemblies with space limitations. The transistor offers a maximum power dissipation of 225 milliwatts, making it appropriate for moderate power amplification and switching tasks.

This transistor features a minimum DC current gain (hFE) of 100, ensuring effective signal amplification, and supports a maximum transition frequency of 100 MHz, which is ideal for high-speed switching applications such as signal processing and small power drivers. The operating temperature range extends from -55°C up to 150°C, providing reliability in harsh industrial and commercial environments.

The device is configured as a single NPN transistor with 3 pins, commonly employed in discrete semiconductor circuits for amplification or switching. It supports a maximum collector-base voltage of 60 V and an emitter-base voltage of 4 V, supporting stability in various voltage conditions.

These characteristics make the onsemi MMBTA05LT3G suitable for industrial electronics, power management circuits, communication devices, consumer electronics, and other commercial applications requiring reliable discrete transistor components.

Compact footprint suits surface mount technology production lines. High current and voltage ratings support versatile circuit designs. Wide temperature range enhances durability in extreme environments. High transition frequency allows use in RF and switching circuits.

This transistor belongs to the MMBTA05L series by onsemi, known for quality discrete semiconductor components. The part is RoHS compliant. Explore our broad selection of Bipolar Transistors and discrete semiconductors to find components that match your technical and industrial requirements.