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onsemi NPN 2 Darlington Transistor 300 mA 30 V HFE 5000 3-Pin SOT-23 MMBTA13LT1G

Category Darlington Transistor Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.01mm
Length 3.04mm
Model MMBTA13LT1G
Mount Type Surface
Series MMBTA13LT1
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Continuous Collector Current Ic 300mA
Maximum Collector Emitter Voltage Vceo 30V
Number of Elements per Chip 2
Minimum DC Current Gain hFE 5000
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 10V
Maximum Collector Emitter Saturation Voltage VceSAT 1.5V
Maximum Collector Base Voltage VCBO 30V
Maximum Collector Cut-off Current 100nA
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 300mW
onsemi 2 Darlington Transistor NPN, 300 mA 30 V HFE 5000, 3-Pin SOT-23

Key Features

  • Features high DC current gain hFE of 5000 for efficient amplification.
  • Constructed with a 3-pin SOT-23 surface mount package for compact integration.
  • Supports maximum power dissipation of 300 mW ensuring robust operation.
  • Operates safely within temperature range of -55°C to 150°C for versatile environmental suitability.
  • Includes automotive-grade qualification conforming to AEC-Q101 standards.
  • Low collector emitter saturation voltage (VceSAT) of 1.5 V reduces power loss.
  • Designed with a 2-element Darlington transistor chip for enhanced current gain.
  • Maximum emitter base voltage of 10 V and maximum collector base voltage of 30 V to protect device integrity.

Product Description

onsemi MMBTA13LT1G is an NPN 2 Darlington transistor designed for discrete semiconductor applications, offering a maximum continuous collector current of 300 mA and collector emitter voltage rating of 30 V. Packaged in a compact 3-pin SOT-23 surface mount form factor, it provides efficient amplification with a minimum DC current gain (hFE) of 5000.

This transistor supports maximum power dissipation of 300 mW and operates within a wide temperature range from -55°C to 150°C, making it suitable for a variety of industrial, automotive, and electronic circuit applications. The device is automotive qualified under the AEC-Q101 standard, ensuring reliable performance in automotive electronic systems.

The low maximum collector emitter saturation voltage of 1.5 V helps minimize power loss during switching. In addition to its 2-element Darlington design, it features maximum emitter base and collector base voltages of 10 V and 30 V respectively, providing protection against voltage stresses.

The MMBTA13LT1G is ideal for use in industrial control circuits, signal amplification, and switching applications where high gain and compact size are required. Its surface mount package improves PCB space efficiency and automated manufacturing processes.

High minimum DC current gain hFE of 5000 ensures strong signal amplification. Compact 3-pin SOT-23 surface mount package for space-saving circuit design. Robust power dissipation and voltage ratings support diverse applications.

Wide operating temperature range for industrial and automotive environments. Automotive qualified to AEC-Q101 standard for dependable automotive electronics usage. Low saturation voltage reduces power losses during operation.

Choose onsemi MMBTA13LT1G for reliable and efficient Darlington Transistor solutions in your next electronics or automotive project. Explore the Electronics & Electricals category on EnvMart for more semiconductor components to complement your design and manufacturing needs.

onsemi NPN 2 Darlington Transistor 300 mA 30 V HFE 5000 3-Pin SOT-23 MMBTA13LT1G
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Frequently Asked Questions

The maximum continuous collector current for the MMBTA13LT1G is 300 mA.

This model has a minimum DC current gain (hFE) of 5000, which provides efficient amplification.

The maximum collector emitter voltage rating (Vceo) for this transistor is 30 V.

It is packaged in a compact 3-pin SOT-23 surface mount format, suitable for space-saving designs.

The MMBTA13LT1G operates within a temperature range of -55°C to 150°C.

The maximum power dissipation for this transistor is 300 mW.

The maximum emitter base voltage (VEBO) is 10 V, and the maximum collector base voltage (VCBO) is 30 V.

Yes, the MMBTA13LT1G is automotive qualified under the AEC-Q101 standard.

The maximum collector emitter saturation voltage (VceSAT) is 1.5 V, which helps reduce power loss.

This transistor features a 2-element Darlington design per chip.

The height of the SOT-23 package is 1.01 mm, and its length is 3.04 mm.

The MMBTA13LT1G is an NPN transistor.

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