onsemi Transistor NPN 8 A 400 V 3-Pin TO-220 Single Configuration MJE13007G

onsemi MJE13007G is a high power NPN bipolar junction transistor designed for use in power amplification and switching applications, capable of handling up to 8 amperes collector current and withstanding collector-emitter voltages as high as 400 volts. It comes in a 3-pin TO-220 package which supports through-hole mounting suitable for industrial electronic assembly.

This transistor supports continuous operation in harsh environments with a wide operating temperature range from -65°C minimum to 150°C maximum. Its minimum DC current gain of 5 ensures adequate amplification for power circuit needs with a max power dissipation rating of 80 watts, making it ideal for power supplies, motor drivers, inverters, and other high current electrical circuits.

The device features a single transistor NPN configuration, offering robust switching speed with a maximum transition frequency of 1 MHz, allowing for efficient control in high-frequency signal environments. The transistor polarity is NPN, compatible with standard bipolar transistor circuit designs.

Dimensionally, the transistor has a length of 10.53 mm, width of 4.83 mm, and height of 30.02 mm. Its maximum collector-base voltage (VCBO) is 700 V and maximum emitter-base voltage (VEBO) is 9 V, providing flexibility in circuit design safety margins. It is not automotive grade certified but is suitable for various industrial, electronic manufacturing, HVAC control, and power management applications.

Supports maximum collector current of 8 amperes. Maximum collector-emitter voltage rating of 400 volts. Power dissipation capacity up to 80 watts. Designed for through-hole mounting with 3 pins in TO-220 package. Operates at temperatures from -65°C to 150°C.

Minimum DC current gain (hFE) of 5 ensures reliable switching performance. Maximum transition frequency of 1 MHz suitable for power applications. Single transistor configuration with NPN polarity. Compact dimensions: length 10.53 mm, width 4.83 mm, height 30.02 mm.

Maximum collector-base voltage and emitter-base voltage ratings of 700 V and 9 V respectively.

Ideal for use in industrial power control, amplification circuits, and electronic equipment requiring reliable switching with high current and voltage capabilities. Browse onsemi products in EnvMart for complementary semiconductor components and power transistors.

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