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onsemi General Purpose NPN Transistor, 1 A, 100 V, Surface Mount, 3-Pin PCP 2SC3646S-TD-E

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.5mm
Length 4.6mm
Model 2SC3646S-TD-E
Width 4mm
Mount Type Surface
Series 2SC3646
Maximum Operating Temperature 150°C
Package Type PCP
Pin Count 3
Maximum Collector Emitter Voltage Vceo 100V
Minimum DC Current Gain hFE 100
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 120V
Maximum Power Dissipation Pd 1.3W
Maximum DC Collector Current Idc 1A
Transistor Configuration Single
Maximum Transition Frequency ft 1MHz
Diodes Inc ZXTN4000ZTA NPN Transistor, 1 A, 60 V, 3-Pin SOT-89Brand DiodesZetex

Key Features

  • Designed for general purpose applications requiring NPN transistor configuration.
  • Supports maximum DC collector current of 1 ampere.
  • Maximum collector-emitter voltage is rated at 100 volts.
  • Surface mount package type PCP with 3 pins provides compact integration.
  • Minimum DC current gain hFE is 100 ensuring moderate amplification.
  • Maximum operating temperature is 150 degrees Celsius for reliable thermal performance.
  • Maximum power dissipation is 1.3 watts enabling efficient heat management.
  • Maximum transition frequency ft is 1 MHz suitable for medium frequency operations.

Product Description

onsemi 2SC3646S-TD-E is a general purpose NPN bipolar transistor designed for discrete semiconductor applications in electronics. It supports a maximum DC collector current of 1 ampere along with a collector-emitter voltage rating of 100 volts, making it suitable for switching and amplification in medium power circuits.

This transistor comes in a compact 3-pin PCP surface mount package with a low profile measuring 4.6 mm long, 4 mm wide, and 1.5 mm high, ideal for space-constrained electronic assemblies. The device has a minimum DC current gain (hFE) of 100 and a maximum power dissipation of 1.3 watts, enabling it to efficiently manage thermal conditions in practical use cases.

Additional electrical parameters include a maximum collector-base voltage (VCBO) of 120 V and maximum emitter-base voltage (VEBO) of 6 V. The transition frequency (ft) of 1 MHz makes it apt for medium frequency applications. Its maximum operating temperature of 150 °C ensures robustness in industrial and commercial electronics environments.

This transistor is suitable for various industrial, manufacturing, and electronic equipment repair applications requiring reliable switching performance and moderate power handling.

Designed for general purpose NPN transistor applications. Maximum collector current of 1 A with 100 V voltage rating. Compact 3-pin PCP package type for surface mounting. Minimum DC current gain of 100 for effective amplification.

Operating temperature up to 150 °C for high reliability. Explore more Bipolar Transistors and discrete semiconductor components at EnvMart to meet your electronic design and repair needs with trusted quality from onsemi.

onsemi General Purpose NPN Transistor, 1 A, 100 V, Surface Mount, 3-Pin PCP 2SC3646S-TD-E
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Frequently Asked Questions

The maximum DC collector current for this model is 1 ampere.

The maximum collector-emitter voltage rating is 100 volts.

It comes in a compact 3-pin PCP surface mount package.

The minimum DC current gain (hFE) is 100, providing moderate amplification.

The dimensions are 4.6 mm in length, 4 mm in width, and 1.5 mm in height.

The maximum operating temperature is rated at 150 degrees Celsius.

It has a maximum power dissipation of 1.3 watts.

The maximum transition frequency (ft) is 1 MHz, suitable for medium frequency applications.

The maximum collector-base voltage (VCBO) is 120 V, and the maximum emitter-base voltage (VEBO) is 6 V.

It is suitable for general purpose applications requiring NPN transistor configuration, including switching and amplification in medium power circuits.

This model is an NPN type bipolar transistor.

This transistor features a pin count of 3.

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