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| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Model | SIA4265EDJ-T1-GE3 |
| Mount Type | Surface |
| Series | SIA |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerPAK SC-70 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 9A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 0.032Ω |
| Maximum Power Dissipation Pd | 15.6W |
| Typical Gate Charge Qg @ Vgs | 13.8nC |
| Maximum Gate Source Voltage Vgs | 8V |
| Typical ESD protection | 3000 V (HBM) |
Vishay SIA4265EDJ-T1-GE3 is a P-Channel MOSFET designed for high efficiency switching applications, featuring a maximum continuous drain current of 9 A and a maximum drain-source voltage of 20 V. Encapsulated in a thermally enhanced PowerPAK SC-70 surface-mount package, this component offers low on-resistance of 0.032 ohms to minimize power losses during operation.
It is engineered for usage in load switches, battery switches, and charger switch applications, benefiting industrial, commercial, and electronic design sectors. The device supports a wide operating temperature range from -55°C to 150°C and can safely dissipate up to 15.6 watts of power, ensuring reliable performance under demanding conditions.
Key electrical features include a typical gate charge of 13.8 nC, a maximum gate-source voltage of 8 V, and robust electrostatic discharge (ESD) protection rated at 3000 V Human Body Model (HBM). The MOSFET meets RoHS compliance, reflecting environmental and sustainability standards.
The small footprint offered by the PowerPAK SC-70 package saves valuable circuit board space while delivering excellent thermal management, making this device suitable for compact and portable equipment. It is surface mount technology (SMT) compatible, facilitating automated assembly processes in manufacturing.
Supports continuous drain current of 9 amperes. Maximum drain-source voltage rating of 20 volts. Low on-resistance of 0.032 ohms for efficient switching. Typical gate charge of 13.8 nanocoulombs at Vgs. Maximum power dissipation rated at 15.6 watts.
Operating temperature range from -55°C to 150°C. Maximum gate-source voltage of 8 volts. ESD protection up to 3000 volts (Human Body Model). Thermally enhanced PowerPAK SC-70 surface mount package. Compliant with RoHS standards.
This MOSFET is ideal for applications involving high current switching with low losses in industrial electronics, power management, battery protection, and load switching. Its compact design and robustness make it a reliable choice for modern power electronics designs.
Browse EnvMart's comprehensive selection of advanced MOSFETs and Semiconductor components to support your project requirements and engineering needs.
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