onsemi BC33725BU is a small signal NPN bipolar junction transistor designed to provide reliable performance in various electronic circuits requiring moderate current and voltage handling capabilities. This transistor features a maximum DC collector current rating of 800 mA and a collector-emitter voltage of 50 V, making it suitable for switching and amplification in consumer electronics, industrial control systems, and general-purpose electronic applications.
The BC33725BU is housed in a traditional TO-92 package with 3 pins, supporting through hole mounting methods for ease of circuit board assembly.
It offers a minimum DC current gain (hFE) of 60 and a maximum power dissipation of 625 mW, ensuring efficient operation under thermal constraints. The transistor polarity is NPN configured for typical low side switching roles. Operating temperature extends from 0°C to 150°C providing robustness across a broad environmental range.
The device supports a maximum transition frequency of 100 MHz, suitable for high frequency amplification and switching purposes like audio amplification and signal processing. Physical dimensions include a height of approximately 20.95 mm, length of 5.3 mm, and width of 4.19 mm, facilitating compact PCB layouts.
This transistor series caters to industrial, electronic assembly, automation, and HVAC applications requiring reliable discrete semiconductor components. It is widely used in designing driver circuits, amplifiers, and low power switching devices.
Supports a maximum DC collector current of 800 mA for moderate power handling. Maximum collector-emitter voltage is rated at 50 volts ensuring safe operation within specified limits. Compact TO-92 package with 3 pins suitable for through hole mounting.
Offers a minimum DC current gain (hFE) of 60 providing good amplification characteristics. Maximum power dissipation rating of 625 milliwatts for thermal reliability. Designed as a single transistor configuration with NPN polarity.
Operating temperature range from 0°C to 150°C for versatile environmental conditions. Maximum transition frequency of 100 MHz suitable for various switching and amplification tasks. Physical dimensions approximately 20.95 mm height, 5.3 mm length, and 4.19 mm width.
Explore more onsemiconductors and electronic components within the Bipolar Transistors category on EnvMart for your industrial, laboratory, and electronics manufacturing needs.
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