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STMicroelectronics MDmesh N-Channel MOSFET, 6.5 A, 600 V, Enhancement Mode, 3-Pin TO-220 STF9NM60N

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STMicroelectronics MDmesh N-Channel MOSFET, 6.5 A, 600 V, Enhancement Mode, 3-Pin TO-220 STF9NM60N

Name: STMicroelectronics MDmesh N-Channel MOSFET, 6.5 A, 600 V, Enhancement Mode, 3-Pin TO-220 STF9NM60N
Brand: STMicroelectronics
SKU: 227774
Price: 1.99 USD
Availability: InStock

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Category Discrete Semiconductor Brand STMicroelectronics Condition New

Specifications

Country of Origin	India
Brand	STMicroelectronics
Height	16.4mm
Length	10.4mm
Model	STF9NM60N
Width	4.6mm
Mount Type	Through Hole
Series	MDmesh
Maximum Operating Temperature	150°C
Package Type	TO-220
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	6.5A
Maximum Drain Source Voltage Vds	600V
Maximum Drain Source Resistance Rds	745mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	25W
Typical Gate Charge Qg @ Vgs	17.4nC
Maximum Gate Source Voltage Vgs	-25, +25V
Forward Voltage Vf	1.6V

Key Features

Maximum continuous drain current of 6.5 A ensures efficient load handling.
600 V drain-source voltage capability suits high voltage circuits.
TO-220 through-hole package type facilitates mounting on PCB.
Enhancement mode operation allows precise switching control.
Low maximum drain-source resistance (745 mΩ) reduces conduction losses.
Maximum power dissipation of 25 W enables stable thermal performance.
Wide operating temperature range from -55°C to 150°C supports durable applications.
Typical gate charge of 17.4 nC offers fast switching speeds.

Product Description

STMicroelectronics STF9NM60N is an advanced MDmesh N-Channel MOSFET designed for industrial and electronic circuit applications requiring high voltage and current performance. This device features an enhancement mode channel with a maximum continuous drain current of 6.5 A and a drain-source voltage rating of 600 V, making it suited for power switching and amplification tasks.

The device is packaged in a TO-220 through-hole format, which facilitates easy PCB mounting and effective heat dissipation. Its low maximum drain-source resistance of 745 milliohms minimizes power losses and improves overall efficiency.

Thermal capabilities include a maximum power dissipation of 25 W and operational temperatures ranging from -55°C up to 150°C, allowing use in demanding environments. The gate charge is optimized at 17.4 nanocoulombs for improved switching speed, while the maximum gate-source voltage tolerance of ±25 V protects it from voltage spikes.

The physical dimensions are compact with height 16.4 mm, length 10.4 mm, and width 4.6 mm, suitable for space-constrained designs. Common industrial applications include power supplies, motor control, power inverters, and other switching circuits where high voltage and current handling are necessary.

Set includes a single MOSFET transistor packaged ready for through-hole assembly in electronic manufacturing. Maximum continuous drain current of 6.5 A ensures efficient load handling. 600 V drain-source voltage capability suits high voltage circuits.

TO-220 through-hole package type facilitates mounting on PCB. Enhancement mode operation allows precise switching control. Low maximum drain-source resistance (745 mΩ) reduces conduction losses. Maximum power dissipation of 25 W enables stable thermal performance.

Wide operating temperature range from -55°C to 150°C supports durable applications. Typical gate charge of 17.4 nC offers fast switching speeds. Maximum gate-source voltage of ±25 V enhances device robustness. Compact dimensions: 16.4 mm height, 10.4 mm length, and 4.6 mm width.

Explore this high-quality MOSFET from STMicroelectronics for your semiconductor and power electronics projects on EnvMart. Browse our extensive range for suitable electronic components to complement your design needs.

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Frequently Asked Questions

The maximum continuous drain current of this model is 6.5 A, which ensures efficient load handling in various applications.

This unit has a maximum drain-source voltage rating of 600 V, making it suitable for high voltage circuits.

The physical dimensions of this MOSFET are 16.4 mm in height, 10.4 mm in length, and 4.6 mm in width.

It comes in a TO-220 through-hole package type, which facilitates easy mounting on PCBs.

The maximum power dissipation for this MOSFET is 25 W, enabling stable thermal performance during operation.

The typical gate charge for this model is 17.4 nC, which contributes to its fast switching speeds.

This MOSFET has a maximum gate-source voltage tolerance of ±25 V, which helps protect it from voltage spikes.

The operating temperature range for this model is from -55°C to 150°C, making it suitable for demanding environments.

The maximum drain-source resistance for this MOSFET is 745 mΩ, which reduces conduction losses and improves efficiency.

Common applications for this model include power supplies, motor control, power inverters, and other switching circuits requiring high voltage and current handling.

This MOSFET features a pin count of 3, which is typical for its package type and design.

This model uses an N-channel type, which is characteristic of enhancement mode MOSFETs for precise switching control.