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STMicroelectronics Transistor NPN 3 A, 80 V, Through Hole SOT-32 Package BD139

Category Bipolar Transistors Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 2.9mm
Length 27.05mm
Model BD139
Width 7.8mm
Mount Type Through Hole
Maximum Operating Temperature 150°C
Package Type SOT-32
Pin Count 3
Maximum Collector Emitter Voltage Vceo 80V
Minimum DC Current Gain hFE 25
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 80V
Maximum Power Dissipation Pd 1.25W
Maximum DC Collector Current Idc 3A
Transistor Configuration Single

Key Features

  • General purpose bipolar transistor suitable for amplification and switching applications.
  • Maximum DC collector current of 3 amperes ensures handling of medium power loads.
  • Maximum collector-emitter voltage rating of 80 volts allows reliable high voltage operation.
  • Package type is Through Hole SOT-32 with 3 pins for easy PCB mounting.
  • Minimum DC current gain (hFE) of 25 supports moderate gain amplification.
  • Maximum power dissipation of 1.25 watts allows stable performance under typical workloads.
  • Transistor configuration is single NPN polarity designed for a wide range of electronics circuits.
  • Operating temperature limit up to 150°C ensures durability in demanding environments.

Product Description

STMicroelectronics BD139 is a reliable NPN transistor designed for general purpose electronic applications requiring moderate power and voltage ratings. It supports a maximum collector current of 3 amperes and a collector-emitter voltage of 80 volts. Packaged in a 3-pin Through Hole SOT-32 form factor, this transistor facilitates easy integration into printed circuit boards, especially suitable for industrial, laboratory, and automotive electronics projects.

The transistor offers a minimum current gain (hFE) of 25 and maximum power dissipation of 1.25 watts, providing a balance between performance and thermal stability. Its maximum emitter-base voltage is 5 volts with a collector-base voltage of 80 volts, ensuring robust electrical reliability. The device is rated to operate safely up to 150°C, making it suitable for high-temperature applications in manufacturing and test environments.

The physical dimensions of the BD139 transistor are length 27.05 mm, width 7.8 mm, and height 2.9 mm, making it compact and easy to handle during assembly. The product complies with no specific standards or automotive certifications but is well recognized for its wide usability in discrete semiconductor electronic components.

General purpose bipolar transistor suitable for amplification and switching applications. Maximum DC collector current of 3 amperes ensures handling of medium power loads. Maximum collector-emitter voltage rating of 80 volts allows reliable high voltage operation.

Package type is Through Hole SOT-32 with 3 pins for easy PCB mounting. Minimum DC current gain (hFE) of 25 supports moderate gain amplification. Maximum power dissipation of 1.25 watts allows stable performance under typical workloads.

Transistor configuration is single NPN polarity designed for a wide range of electronics circuits. Operating temperature limit up to 150°C ensures durability in demanding environments. Compact physical size with length 27.05mm, width 7.8mm, and height 2.9mm.

Ideal for industrial, laboratory, construction, HVAC, manufacturing, and electronic equipment design applications. Explore more Bipolar Transistors and semiconductors in the EnvMart catalog to meet your component requirements.

STMicroelectronics Transistor NPN 3 A, 80 V, Through Hole SOT-32 Package BD139
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Frequently Asked Questions

The BD139 transistor has a maximum DC collector current of 3 amperes, allowing it to handle medium power loads effectively.

This model has a maximum collector-emitter voltage rating of 80 volts, enabling reliable operation in high voltage applications.

The BD139 is packaged in a Through Hole SOT-32 form factor, which features 3 pins for easy PCB mounting.

The minimum DC current gain (hFE) for the BD139 is 25, which supports moderate gain amplification.

This transistor can dissipate a maximum power of 1.25 watts, providing stable performance under typical workloads.

The physical dimensions of the BD139 are 27.05 mm in length, 7.8 mm in width, and 2.9 mm in height.

The BD139 transistor is rated for a maximum operating temperature of 150°C, making it suitable for high-temperature applications.

The BD139 features a single NPN transistor configuration, designed for a wide range of electronic circuits.

The maximum emitter-base voltage (VEBO) for this transistor is 5 volts, ensuring robust electrical reliability.

This transistor is suitable for general purpose amplification and switching applications, including use in industrial, laboratory, and automotive electronics.

The BD139 has a maximum collector-base voltage (VCBO) rating of 80 volts, supporting its use in high voltage environments.

The BD139 features a pin count of 3, facilitating its integration into various electronic circuits.

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