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STMicroelectronics NPN Power Transistor, 10 A Collector Current, 60 V Collector Emitter Voltage, TO-220 Package MJE3055T

Category Bipolar Transistors Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 29.75mm
Length 10.4mm
Model MJE3055T
Width 4.6mm
Mount Type Through Hole
Maximum Operating Temperature 150°C
Package Type TO-220
Pin Count 3
Maximum Collector Emitter Voltage Vceo 60V
Minimum DC Current Gain hFE 5
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 70V
Maximum Power Dissipation Pd 75W
Maximum DC Collector Current Idc 10A
Transistor Configuration Single
Maximum Transition Frequency ft 2MHz

Key Features

  • This transistor features a single transistor configuration suitable for power amplification.
  • Maximum collector base voltage rating of 70 V ensures stable operation under high electrical stress.
  • Capable of dissipating up to 75 W power for high-performance applications.
  • Designed with through-hole mount type for easy PCB integration.
  • Supports maximum operating temperature up to 150 degrees Celsius for reliable thermal management.
  • Has a minimum DC current gain (hFE) of 5 and a maximum transition frequency of 2 MHz.
  • Compact size with 29.75mm height, 10.4mm length, and 4.6mm width for space-efficient designs.
  • Comes with 3 pin count in TO-220 package typical for power transistors.

Product Description

STMicroelectronics MJE3055T is a high-power NPN bipolar transistor designed for demanding applications requiring high collector current and voltage handling capabilities. This transistor supports a maximum DC collector current of 10 amperes and can withstand a collector-emitter voltage of up to 60 volts, making it suitable for power control circuits and amplification tasks.

It features a through-hole mount type with a standard 3-pin TO-220 package, enabling robust physical and thermal connections to heat sinks for enhanced dissipation of up to 75 watts. The device can safely operate at temperatures up to 150 degrees Celsius, ensuring reliability in industrial environments.

The MJE3055T transistor exhibits minimal gain with a DC current gain (hFE) of 5 and operates with a transition frequency of 2 MHz. It supports a maximum collector-base voltage of 70 volts and emitter-base voltage of 5 volts. Its compact form factor with a height of 29.75 mm, length of 10.4 mm, and width of 4.6 mm facilitates integration into electrical assemblies without occupying excessive space.

This transistor is ideal for circuit designs in industrial, power supply, and general-purpose amplification roles where durability, power handling, and thermal efficiency are critical. The single transistor configuration optimizes ease of use for engineers working on power electronics projects, motor drives, and audio amplifiers.

This transistor features a single transistor configuration suitable for power amplification. Maximum collector base voltage rating of 70 V ensures stable operation under high electrical stress. Capable of dissipating up to 75 W power for high-performance applications.

Designed with through-hole mount type for easy PCB integration. Supports maximum operating temperature up to 150 degrees Celsius for reliable thermal management. Has a minimum DC current gain (hFE) of 5 and a maximum transition frequency of 2 MHz.

Compact size with 29.75mm height, 10.4mm length, and 4.6mm width for space-efficient designs. Comes with 3 pin count in TO-220 package typical for power transistors.

Perfect for use in industrial power management, electronic component assemblies, and general semiconductor applications. Explore the wide range of STMicroelectronics Bipolar Transistors to suit diverse electrical component requirements at EnvMart.

STMicroelectronics NPN Power Transistor, 10 A Collector Current, 60 V Collector Emitter Voltage, TO-220 Package MJE3055T
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Frequently Asked Questions

The MJE3055T transistor supports a maximum DC collector current of 10 amperes.

It has a maximum collector-emitter voltage rating of 60 volts.

This transistor can dissipate up to 75 watts of power.

It comes in a TO-220 package type, which is standard for power transistors.

The MJE3055T can operate at a maximum temperature of 150 degrees Celsius.

It has a minimum DC current gain (hFE) of 5.

The maximum transition frequency for the MJE3055T is 2 MHz.

This model features a 3-pin configuration.

It has dimensions of 29.75 mm in height, 10.4 mm in length, and 4.6 mm in width.

The transistor is designed for through-hole mounting, facilitating easy PCB integration.

It supports a maximum collector-base voltage of 70 volts.

This transistor is suitable for power control circuits and general-purpose amplification tasks.

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