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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 29.75mm |
| Length | 10.4mm |
| Model | MJE3055T |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 60V |
| Minimum DC Current Gain hFE | 5 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 70V |
| Maximum Power Dissipation Pd | 75W |
| Maximum DC Collector Current Idc | 10A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 2MHz |
STMicroelectronics MJE3055T is a high-power NPN bipolar transistor designed for demanding applications requiring high collector current and voltage handling capabilities. This transistor supports a maximum DC collector current of 10 amperes and can withstand a collector-emitter voltage of up to 60 volts, making it suitable for power control circuits and amplification tasks.
It features a through-hole mount type with a standard 3-pin TO-220 package, enabling robust physical and thermal connections to heat sinks for enhanced dissipation of up to 75 watts. The device can safely operate at temperatures up to 150 degrees Celsius, ensuring reliability in industrial environments.
The MJE3055T transistor exhibits minimal gain with a DC current gain (hFE) of 5 and operates with a transition frequency of 2 MHz. It supports a maximum collector-base voltage of 70 volts and emitter-base voltage of 5 volts. Its compact form factor with a height of 29.75 mm, length of 10.4 mm, and width of 4.6 mm facilitates integration into electrical assemblies without occupying excessive space.
This transistor is ideal for circuit designs in industrial, power supply, and general-purpose amplification roles where durability, power handling, and thermal efficiency are critical. The single transistor configuration optimizes ease of use for engineers working on power electronics projects, motor drives, and audio amplifiers.
This transistor features a single transistor configuration suitable for power amplification. Maximum collector base voltage rating of 70 V ensures stable operation under high electrical stress. Capable of dissipating up to 75 W power for high-performance applications.
Designed with through-hole mount type for easy PCB integration. Supports maximum operating temperature up to 150 degrees Celsius for reliable thermal management. Has a minimum DC current gain (hFE) of 5 and a maximum transition frequency of 2 MHz.
Compact size with 29.75mm height, 10.4mm length, and 4.6mm width for space-efficient designs. Comes with 3 pin count in TO-220 package typical for power transistors.
Perfect for use in industrial power management, electronic component assemblies, and general semiconductor applications. Explore the wide range of STMicroelectronics Bipolar Transistors to suit diverse electrical component requirements at EnvMart.
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