ROHM Dual 2 N-Channel Power MOSFET 1 A 30 V Enhancement Mode 6-Pin TSMT QS6K1TR

ROHM QS6K1TR Dual 2 N-Channel Power MOSFET is a high-performance, low ON-resistance transistor designed in a compact 6-pin TSMT surface mount package. It supports a maximum continuous drain current of 1 A and a maximum drain-source voltage of 30 V, making it suitable for various power electronic applications.

Operating within a temperature range from -55°C to +150°C, this MOSFET provides reliable operation under harsh conditions. The device features an enhancement mode channel type with a typical gate charge of 1.7 nC at the gate-source voltage threshold, enabling fast switching speeds and efficient power control.

Its compact dimensions (3 mm length, 1.8 mm width, and 0.95 mm height) and surface mount design are ideal for dense PCB layouts in industrial, automotive, and consumer electronics.

Key technical features include a maximum power dissipation of 1.25 W, a low drain-source resistance of 238 milliohms for minimal conduction loss, and a forward voltage drop of 1.2 V. The transistor configuration is dual, with two elements per chip, allowing for versatile circuit integration.

Typical applications include motor control such as brushless DC motors and stepper motors, portable data terminals, digital and bench-type multimeters, surveillance and machine vision cameras, embedded PCs, smart meters, and security systems like fingerprint authentication and ground fault circuit interrupters.

The device is lead-free and RoHS compliant, aligning with environmental and safety standards. This product supports innovation in power management across automotive, industrial, and commercial fields.

Features dual 2 N-Channel enhancement mode MOSFETs in a 6-pin TSMT package. Low ON-resistance of 238 milliohms ensures efficient power delivery. Maximum power dissipation capability of 1.25 Watts for reliable performance.

Wide operating temperature range from -55°C to +150°C. Typical gate charge of 1.7 nC at Vgs supports fast switching speeds. Designed for surface mounting with compact dimensions: length 3 mm, width 1.8 mm, and height 0.95 mm.

Forward voltage drop of 1.2 V enhances energy efficiency in circuits. Applications include motor control, portable data terminals, digital multimeters, surveillance cameras, and embedded PCs. RoHS compliant and Pb-free manufacturing process for environmental safety.

Dual transistor configuration and two elements per chip support complex circuit designs. Explore the ROHM MOSFET category on EnvMart for advanced power semiconductor solutions tailored to industrial, automotive, and electronics manufacturing applications.