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onsemi High Voltage NPN Transistor 4 A 400 V TO-220 Package FJP3305H1TU

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 16.51mm
Length 10.67mm
Model FJP3305H1TU
Width 4.83mm
Mount Type Through Hole
Series FJP3305
Maximum Operating Temperature 150°C
Package Type TO-220
Pin Count 3
Maximum Collector Emitter Voltage Vceo 400V
Minimum DC Current Gain hFE 8
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 9V
Maximum Collector Base Voltage VCBO 700V
Maximum Power Dissipation Pd 75W
Maximum DC Collector Current Idc 4A
Transistor Configuration Single
Maximum Transition Frequency ft 4MHz

Key Features

  • High voltage rating suitable for power applications.
  • Mount type is through hole for easy PCB integration.
  • Maximum power dissipation of 75 W ensures reliable performance.
  • Low minimum DC current gain of 8 supports wide operational range.
  • Maximum operating temperature up to 150°C for harsh environments.
  • Maximum transition frequency 4 MHz supporting moderate speed switching.
  • Single transistor configuration with 3 pin count.
  • Maximum collector base voltage of 700 V and maximum emitter base voltage 9 V.

Product Description

onsemi FJP3305H1TU is a high voltage NPN bipolar junction transistor rated for a maximum DC collector current of 4 amperes and a maximum collector emitter voltage of 400 volts. It features a TO-220 package type with 3 pins, and is designed for through hole mounting, making it ideal for power control and switching applications in industrial and electronics projects.

This transistor supports a maximum power dissipation of 75 watts, enabling it to operate efficiently under demanding thermal conditions. It maintains reliability up to an operating temperature of 150°C, making it suitable for use in environments requiring high thermal stability.

The device has a minimum DC current gain (hFE) of 8, with maximum collector base voltage of 700 volts and maximum emitter base voltage of 9 volts. Its transition frequency is 4 MHz, allowing it to support moderate frequency switching tasks. The compact physical size with dimensions of height 16.51 mm, length 10.67 mm, and width 4.83 mm ensures integration into space-constrained circuit boards.

This transistor is supplied as a single unit configuration without automotive standard certifications. It is widely applicable in power electronics, motor control, industrial machinery, and electronic manufacturing for switching and amplification purposes.

High voltage rating suitable for power applications. Mount type is through hole for easy PCB integration. Maximum power dissipation of 75 W ensures reliable performance. Low minimum DC current gain of 8 supports wide operational range.

Maximum operating temperature up to 150°C for harsh environments. Compact dimensions: height 16.51 mm, width 4.83 mm, length 10.67 mm. Maximum transition frequency 4 MHz supporting moderate speed switching. Single transistor configuration with 3 pin count.

Maximum collector base voltage of 700 V and maximum emitter base voltage 9 V. Designed without automotive standards and approvals.

Suitable for a broad range of industrial, commercial, and electronic applications, the FJP3305H1TU transistor by onsemi is a dependable choice for discrete semiconductor needs. Browse integrated and discrete semiconductors on EnvMart for complementary electronic components and devices.

Explore more products in our Bipolar Transistors category.

onsemi High Voltage NPN Transistor 4 A 400 V TO-220 Package FJP3305H1TU
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Frequently Asked Questions

The maximum collector emitter voltage (Vceo) for this model is 400 volts.

This transistor has a maximum DC collector current rating of 4 amperes.

It supports a maximum power dissipation of 75 watts, ensuring reliable performance under thermal conditions.

The maximum transition frequency for this model is 4 MHz, suitable for moderate speed switching applications.

The dimensions of the TO-220 package are height 16.51 mm, length 10.67 mm, and width 4.83 mm.

The minimum DC current gain (hFE) for this model is 8, which supports a wide operational range.

This transistor features a single configuration with a pin count of 3.

The maximum collector base voltage (VCBO) is 700 volts.

It is designed for through hole mounting, facilitating easy PCB integration.

This model is widely applicable in power electronics, motor control, industrial machinery, and electronic manufacturing for switching and amplification purposes.

The maximum emitter base voltage (VEBO) is 9 volts.

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