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onsemi Small Signal PNP Transistor, 600 mA, 40 V, 3-Pin TO-92 Package 2N4403TA

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 21.7mm
Length 5.2mm
Model 2N4403TA
Width 4.19mm
Mount Type Through Hole
Series 2N4403
Maximum Operating Temperature 150°C
Package Type TO-92
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -40V
Minimum DC Current Gain hFE 20
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 40V
Maximum Power Dissipation Pd 625mW
Maximum DC Collector Current Idc -600mA
Transistor Configuration Single

Key Features

  • Designed for low power switching and amplification applications.
  • Features a maximum power dissipation of 625 mW for reliable thermal handling.
  • Through-hole mount type ensures easy PCB integration.
  • Operates efficiently in temperature ranges from -55°C to 150°C.
  • Compact 3-pin TO-92 plastic package with dimensions 21.7mm height, 5.2mm length, and 4.19mm width.
  • Maximum collector-base voltage (VCBO) of 40 V and emitter-base voltage (VEBO) of 5 V.

Product Description

onsemi 2N4403TA is a small signal PNP bipolar junction transistor (BJT) housed in a compact TO-92 plastic package. It is rated for a maximum DC collector current of 600 mA and a collector-emitter voltage of 40 V, designed primarily for low power switching and amplification in electronic circuits.

This transistor supports through-hole mounting, facilitating straightforward incorporation into PCB designs. The device can reliably dissipate up to 625 mW of power, suitable for a range of industrial, laboratory, and consumer electronics applications requiring efficient current switching or signal amplification.

The operating temperature range spans from -55°C to 150°C, making it applicable in diverse climatic conditions and industrial environments. The transistor features a PNP polarity with a minimum DC current gain (hFE) of 20, providing adequate amplification capabilities for control and signal processing tasks.

Physically, the TO-92 package measures 21.7 mm in height, 5.2 mm in length, and 4.19 mm in width, with a 3-pin configuration optimized for compact electronic assemblies. The maximum collector-base voltage (VCBO) is 40 V, while the maximum emitter-base voltage (VEBO) rating is 5 V, ensuring robust electrical performance within specified limits.

Bipolar junction transistors like the 2N4403TA are widely used in analog and digital circuits, including switching regulators, small signal amplification, and interfacing circuits in automotive, consumer electronics, and industrial control systems.

Designed for low power switching and amplification applications. Features a maximum power dissipation of 625 mW for reliable thermal handling. Through-hole mount type ensures easy PCB integration. Operates efficiently in temperature ranges from -55°C to 150°C.

Compact 3-pin TO-92 plastic package with precise dimensional specifications. Transistor polarity: PNP with minimum DC current gain (hFE) of 20. Maximum collector-base voltage (VCBO) of 40 V and emitter-base voltage (VEBO) of 5 V.

Explore the onsemi 2N4403TA and other Bipolar Transistors in EnvMart for your industrial, electronic, and manufacturing needs.

onsemi Small Signal PNP Transistor, 600 mA, 40 V, 3-Pin TO-92 Package 2N4403TA
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Frequently Asked Questions

The maximum DC collector current rating for the 2N4403TA is 600 mA.

This model can dissipate a maximum power of 625 mW.

The dimensions of the TO-92 package are 21.7 mm in height, 5.2 mm in length, and 4.19 mm in width.

It operates efficiently within a temperature range of -55°C to 150°C.

The transistor polarity of this model is PNP.

The minimum DC current gain (hFE) for the 2N4403TA is 20.

The maximum collector-base voltage (VCBO) for this transistor is 40 V.

The maximum emitter-base voltage (VEBO) rating is 5 V.

This model supports through-hole mounting, making it easy to integrate into PCB designs.

It is suitable for low power switching and amplification applications in various electronic circuits.

The transistor configuration of this model is single.

The 2N4403TA is manufactured in India.

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