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onsemi Darlington NPN Transistor 500 mA 30 V 3-Pin TO-92 KSP13BU

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onsemi Darlington NPN Transistor 500 mA 30 V 3-Pin TO-92 KSP13BU

Name: onsemi Darlington NPN Transistor 500 mA 30 V 3-Pin TO-92 KSP13BU
Brand: onsemi
SKU: 223895
Price: 0.13 USD
Availability: InStock

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Category Darlington Transistor Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	4.58mm
Length	4.58mm
Model	KSP13BU
Mount Type	Through Hole
Series	KSP13
Maximum Operating Temperature	150°C
Package Type	TO-92
Minimum Operating Temperature	-55°C
Pin Count	3
Maximum Continuous Collector Current Ic	500mA
Maximum Collector Emitter Voltage Vceo	30V
Number of Elements per Chip	1
Minimum DC Current Gain hFE	5000
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	10V
Maximum Collector Emitter Saturation Voltage VceSAT	1.5V
Maximum Collector Base Voltage VCBO	30V
Maximum Collector Cut-off Current	0.0001mA
Maximum Power Dissipation Pd	625mW
onsemi KSP13BU 1 Darlington Transistor NPN, 500 mA 30 V HFE	5000, 3-Pin TO-92

Key Features

This transistor features a TO-92 package for easy through-hole mounting.
It has a minimum DC current gain (hFE) of 5000, suitable for high amplification applications.
The maximum power dissipation is 625 mW, allowing reliable operation under moderate loads.
The transistor operates within a temperature range from -55°C to 150°C, ensuring wide environmental compatibility.
It has a maximum collector emitter saturation voltage of 1.5 V and a maximum emitter base voltage of 10 V.
The device includes 3 pins and a single element per chip, conforming to standard bipolar junction transistor design.
Maximum collector-emitter voltage is 30 V, and maximum collector base voltage is 30 V.
This product is designed for use in electronic circuits requiring high gain amplification with low input currents.

Product Description

onsemi KSP13BU is a Darlington NPN transistor designed for various electronic applications requiring high current gain and moderate voltage handling. With a maximum continuous collector current of 500 mA and collector-emitter voltage of 30 V, this transistor suits amplification needs in industrial and consumer electronics.

The transistor comes in a TO-92 package, promoting easy through-hole mounting on PCB designs. Its minimum DC current gain (hFE) of 5000 ensures efficient amplification, making it ideal for switching and amplification circuits that demand minimal base current.

Operational temperature ranges from -55°C to 150°C, offering robust performance across wide environmental conditions. The power dissipation is rated at 625 mW, supporting reliable thermal management in typical operating scenarios.

The transistor's maximum emitter base voltage of 10 V along with a collector saturation voltage of 1.5 V supports efficient switching characteristics. With three pins and a single chip element, the device integrates easily into standard electronic assemblies.

Applications include amplification in signal processing, power management, and electronic control systems in sectors such as manufacturing, communication, instrumentation, and consumer electronics.

This transistor features a TO-92 package for easy through-hole mounting. High current gain with minimum hFE of 5000 for efficient amplification. Maximum power dissipation of 625 mW ensures reliability. Wide operating temperature range from -55°C to 150°C.

Suitable for electronic control, amplification, and switching applications. Explore the wide onsemi transistor portfolio on EnvMart for diverse semiconductor solutions.

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