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onsemi Transistor NPN 50 mA 25 V 3-Pin TO-92 Bipolar KSP10BU

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 4.58mm
Length 4.58mm
Model KSP10BU
Width 3.86mm
Mount Type Through Hole
Series KSP10
Maximum Operating Temperature 150°C
Package Type TO-92
Pin Count 3
Maximum Collector Emitter Voltage Vceo 25V
Minimum DC Current Gain hFE 60
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 3V
Maximum Collector Base Voltage VCBO 30V
Maximum Power Dissipation Pd 1W
Maximum DC Collector Current Idc 50mA
Transistor Configuration Single
Maximum Transition Frequency ft 650MHz

Key Features

  • Designed for through-hole mounting in electronic circuits.
  • Maximum collector base voltage is rated at 30 V.
  • High frequency operation with transition frequency up to 650 MHz.
  • Maximum power dissipation rated at 1 watt for reliable performance.
  • Minimum DC current gain of 60 ensures efficient amplification.
  • Can operate safely up to 150 degrees Celsius.
  • Ideal for RF and low-power switching applications.
  • Single transistor configuration suitable for various circuit designs.

Product Description

onsemi KSP10BU is a compact and reliable NPN bipolar junction transistor (BJT) designed for switching and amplification in low power applications. Featuring a TO-92 package with three pins, it supports a maximum DC collector current of 50 mA and a collector-emitter voltage of 25 V. This transistor is intended for through-hole mounting and offers robust electrical characteristics suitable for RF and general purpose electronic circuits.

The maximum collector base voltage rating of 30 V and maximum emitter base voltage of 3 V provide a safe operating window. Its high transition frequency of 650 MHz accommodates medium frequency switching tasks, making it versatile for various industrial and electronic design projects. The device dissipates up to 1 watt of power, ensuring thermal stability during operation.

Thermal tolerance up to 150°C enables usage in environments with moderate heat, while the minimum DC current gain of 60 supports efficient transistor amplification. Precise mechanical dimensions of 4.58 mm length, 4.58 mm height, and 3.86 mm width make it compatible with standard PCB layouts for compact circuit assembly.

The KSP10BU transistor is commonly used in industrial electronics, consumer devices, telecommunications, and manufacturing applications where reliable small-signal switching is required. Its NPN configuration suits amplifying and switching functions in signal processing circuits, power regulators, and oscillators.

Designed for through-hole mounting in electronic circuits. Maximum collector base voltage is rated at 30 V. High frequency operation with transition frequency up to 650 MHz. Maximum power dissipation rated at 1 watt for reliable performance.

Minimum DC current gain of 60 ensures efficient amplification. Can operate safely up to 150 degrees Celsius. Compact dimensions: 4.58 mm length, 4.58 mm height, and 3.86 mm width. Ideal for RF and low-power switching applications.

Single transistor configuration suitable for various circuit designs. NPN polarity compatible with common bipolar junction transistor uses.

Enabling efficient transistor switching and amplification needs, the onsemi KSP10BU is a preferred choice within the Electronics & Electricals sector. Explore more semiconductor and transistor products in the Bipolar Transistors category at EnvMart for varied engineering solutions.

onsemi Transistor NPN 50 mA 25 V 3-Pin TO-92 Bipolar KSP10BU
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Frequently Asked Questions

The maximum collector-emitter voltage (Vceo) of the KSP10BU transistor is rated at 25 V.

The KSP10BU transistor has a maximum transition frequency of 650 MHz, suitable for high-frequency applications.

This transistor is rated for a maximum power dissipation of 1 watt, ensuring reliable performance during operation.

The dimensions of the KSP10BU are 4.58 mm in length, 4.58 mm in height, and 3.86 mm in width.

The minimum DC current gain (hFE) for the KSP10BU is 60, which supports efficient amplification.

This model is designed for through-hole mounting in electronic circuits.

The KSP10BU can operate safely at temperatures up to 150 degrees Celsius.

The maximum collector base voltage (VCBO) rating for this transistor is 30 V.

This transistor is ideal for RF and low-power switching applications, as well as general-purpose electronic circuits.

The maximum DC collector current (Idc) for the KSP10BU is 50 mA.

The KSP10BU features a single transistor configuration, suitable for various circuit designs.

The KSP10BU has an NPN polarity, making it compatible with common bipolar junction transistor applications.

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