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ROHM N-Channel IGBT Transistor 50A 650V 3-Pin TO-247N Through Hole RGWX5TS65EHRC11
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Model | RGWX5TS65EHRC11 |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247N |
| Minimum Operating Temperature | -40°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 50A |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.9V |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Power Dissipation Pd | 348W |
| Maximum Gate Emitter Voltage VGEO | ±30 V |
Key Features
- This transistor features a 3-pin TO-247N package for through-hole mounting.
- Maximum continuous collector current is rated at 50 amperes.
- Collector emitter voltage (Vceo) has a maximum rating of 650 volts.
- Maximum power dissipation is 348 watts, ensuring efficient heat management.
- High switching speed of 1 MHz supports efficient operation in switching power circuits.
- Maximum gate emitter voltage of ±30 volts provides operational reliability.
- Low collector emitter saturation voltage of 1.9 volts enhances energy efficiency.
- Operating temperature range from -40°C to 175°C makes it suitable for diverse environments.
Product Description
ROHM RGWX5TS65EHRC11 N-Channel IGBT transistor is designed for high performance in semiconductors and power electronics. It features a maximum continuous collector current of 50 amperes and a collector emitter voltage rating of 650 volts. Packaged in a 3-pin TO-247N through-hole mount format, this device is tailored for robust industrial and automotive applications.
This transistor supports high-speed switching at up to 1 MHz, contributing to improved efficiency in DC-DC converters, power factor correction circuits, and industrial inverters. The device has a maximum power dissipation rating of 348 watts, enabling it to handle significant power loads with effective thermal management.
The maximum gate emitter voltage of ±30 volts and low collector emitter saturation voltage of 1.9 volts reduce switching losses and enhance operational reliability. Its wide operating temperature range from -40°C to 175°C allows for deployment in harsh environments and automotive-grade electronics.
Qualifying to the AEC-Q101 automotive standard, the RGWX5TS65EHRC11 is well suited for automotive on-board and off-board computers, DC-DC converters, and power management modules. The through-hole TO-247N packaging supports easy integration into existing systems.
This transistor features a 3-pin TO-247N package for through-hole mounting. High switching speed of 1 MHz supports efficient operation in switching power circuits. Maximum continuous collector current of 50 amperes. Collector emitter voltage rating of 650 volts.
Maximum power dissipation of 348 watts for robust performance. Operating temperature range from -40°C to 175°C. Low collector emitter saturation voltage of 1.9 volts enhances efficiency. AEC-Q101 qualified for automotive applications.
This ROHM transistor is ideal for use in industrial, automotive, and power electronics applications, including DC-DC converters, industrial inverters, power supply modules, and various switching circuits. Its high current capacity and voltage rating ensure reliability in demanding environments.
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Frequently Asked Questions
The maximum continuous collector current for this model is rated at 50 amperes.
The maximum collector emitter voltage (Vceo) rating is 650 volts.
This transistor has a maximum power dissipation rating of 348 watts.
The operating temperature range for this IGBT transistor is from -40°C to 175°C.
The maximum gate emitter voltage for this transistor is ±30 volts.
The low collector emitter saturation voltage (VceSAT) is 1.9 volts.
It is packaged in a 3-pin TO-247N format for through-hole mounting.
Yes, it qualifies to the AEC-Q101 automotive standard, making it suitable for automotive applications.
The switching speed of this model is up to 1 MHz, supporting efficient operation in power circuits.
This transistor is suitable for industrial, automotive, and power electronics applications, including DC-DC converters and power management modules.
This model features a pin count of 3.
The country of origin for this product is India.
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