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ROHM N-Channel IGBT 40 A 650 V 3-Pin TO-247N Through Hole RGW80TS65HRC11
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Model | RGW80TS65HRC11 |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247N |
| Minimum Operating Temperature | -40°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 40A |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.9V |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Power Dissipation Pd | 214W |
| Maximum Gate Emitter Voltage VGEO | ±30 V |
Key Features
- This IGBT operates with low collector emitter saturation voltage ensuring efficient switching.
- Features high-speed switching capability suitable for applications up to 1 MHz.
- The device is AEC-Q101 qualified for automotive reliability standards.
- Supports a wide operating temperature range from -40°C to 175°C.
- Pb-free lead plating and RoHS compliant for environmentally friendly use.
- Provides 214 W maximum power dissipation capacity for robust performance.
- Designed for automotive, industrial inverter, DC-DC converters, and power factor correction circuits.
- Includes ±30 V maximum gate emitter voltage tolerance for stable gate control.
Product Description
ROHM RGW80TS65HRC11 N-Channel IGBT is a high-performance discrete semiconductor device engineered to handle continuous collector currents up to 40 A and a maximum collector emitter voltage of 650 V. Packaged in a 3-pin TO-247N through-hole format, it ensures reliable mounting and effective heat dissipation in varied industrial environments.
This field stop trench IGBT features low collector emitter saturation voltage of 1.9 V and supports high-speed switching up to 1 MHz, contributing to improved energy efficiency and reduced switching losses in power conversion applications.
The device is AEC-Q101 qualified, aligning with stringent automotive standards, making it suitable for both on-board and off-board automotive electronics, including DC-DC converters and power factor correction modules.
Operating temperature range spans from -40°C to 175°C, ensuring stable performance across harsh environmental conditions. The IGBT complies with RoHS directives and features Pb-free lead plating, supporting environmental safety initiatives.
Its maximum power dissipation rating of 214 W endorses robust durability for demanding applications, including industrial inverters and automotive power management systems. This IGBT operates with low collector emitter saturation voltage ensuring efficient switching.
Features high-speed switching capability suitable for applications up to 1 MHz. The device is AEC-Q101 qualified for automotive reliability standards. Supports a wide operating temperature range from -40°C to 175°C. Pb-free lead plating and RoHS compliant for environmentally friendly use.
Provides 214 W maximum power dissipation capacity for robust performance. Designed for automotive, industrial inverter, DC-DC converters, and power factor correction circuits. Includes ±30 V maximum gate emitter voltage tolerance for stable gate control.
3-pin TO-247N package facilitates secure through-hole mounting and thermal management.
This component is ideal for industrial, automotive, and power electronics applications where efficiency, reliability, and compliance with automotive standards are critical. Its robust design and certification make it a reliable choice for electronic system integrators.
Explore related semiconductor and power electronic components available at EnvMart for complete solutions in industrial and automotive electronics.
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Frequently Asked Questions
The maximum continuous collector current for this IGBT is 40 A.
This model has a maximum collector emitter voltage rating of 650 V.
It supports an operating temperature range from -40°C to 175°C.
The maximum power dissipation capacity is rated at 214 W.
It is packaged in a 3-pin TO-247N format suitable for through-hole mounting.
The maximum gate emitter voltage tolerance is ±30 V.
Yes, it is AEC-Q101 qualified, meeting automotive reliability standards.
The collector emitter saturation voltage is 1.9 V.
It is designed for automotive, industrial inverters, DC-DC converters, and power factor correction circuits.
It features high-speed switching capability suitable for applications up to 1 MHz.
The country of origin for this IGBT is India.
This model utilizes an N-channel configuration.
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