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ROHM N-Channel IGBT 30 A 650 V, 3-Pin TO-247N Through Hole RGW60TS65CHRC11
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Model | RGW60TS65CHRC11 |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247N |
| Minimum Operating Temperature | -40°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 30A |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.9V |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Power Dissipation Pd | 178W |
| Maximum Gate Emitter Voltage VGEO | ±30 V |
Key Features
- High maximum power dissipation of 178 W ensures stable operation.
- TO-247N package with through hole mounting supports easy installation.
- Features ±30 V maximum gate emitter voltage for robust gate control.
- Capable of switching speeds up to 1 MHz for efficient performance.
- Automotive-grade AEC-Q101 qualification ensures reliability.
- Wide operating temperature range from -40°C to 175°C for demanding environments.
- Low collector emitter saturation voltage of 1.9 V minimizes power loss.
- Lead-free Pb-free lead plating and RoHS compliant for environmental safety.
Product Description
ROHM RGW60TS65CHRC11 N-Channel IGBT is a high-performance transistor designed for automotive, industrial inverter, DC-DC converters, power factor correction (PFC), and on & off board computer applications. It features a 3-Pin TO-247N package with through hole mount type, rated for a continuous collector current of 30 A and a collector emitter voltage of 650 V.
This device supports high switching speeds up to 1 MHz, contributing to efficient power management and reduced switching losses. The ±30 V maximum gate emitter voltage and low saturation voltage of 1.9 V enable enhanced performance and lower power consumption.
Qualified under the AEC-Q101 automotive standard, it is suitable for rugged environments and demanding automotive use cases. The device operates reliably within a temperature range of -40°C to 175°C, supporting applications requiring thermal endurance.
Manufactured with Pb-free lead plating and compliant with RoHS standards, the RGW60TS65CHRC11 prioritizes environmental sustainability. Its package type and through hole mounting ensure easy integration into existing electronic assemblies.
High maximum power dissipation of 178 W supports demanding loads. Low saturation voltage reduces conduction losses. Wide operating temperature range for automotive and industrial applications. AEC-Q101 qualification for automotive reliability.
Pb-free lead plating and RoHS compliance for safer use. This N-Channel IGBT device from ROHM is engineered to enhance efficiency and reliability in power switching electronics used across industrial, automotive, and HVAC systems.
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Frequently Asked Questions
The maximum continuous collector current for this IGBT is 30 A.
The maximum collector emitter voltage for this model is 650 V.
It has a maximum power dissipation capability of 178 W.
This IGBT comes in a TO-247N package type with a through hole mounting style.
The operating temperature range for the RGW60TS65CHRC11 is from -40°C to 175°C.
The maximum gate emitter voltage for this IGBT is ±30 V.
This model is qualified under the AEC-Q101 automotive standard.
The maximum collector emitter saturation voltage is 1.9 V.
This IGBT is designed for automotive, industrial inverter, DC-DC converters, and power factor correction applications.
The RGW60TS65CHRC11 has a pin count of 3.
The country of origin for this IGBT is India.
This IGBT is capable of switching speeds up to 1 MHz.
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