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ROHM N-Channel MOSFET 3 A, 60 V Enhancement, 8-Pin TSMT-8 Package QH8KC5TCR

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ROHM N-Channel MOSFET 3 A, 60 V Enhancement, 8-Pin TSMT-8 Package QH8KC5TCR

Name: ROHM N-Channel MOSFET 3 A, 60 V Enhancement, 8-Pin TSMT-8 Package QH8KC5TCR
Brand: ROHM
SKU: 219404
Price: 0.52 USD
Availability: InStock

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Category MOSFET Brand ROHM Condition New

Specifications

Country of Origin	India
Brand	ROHM
Height	2.9mm
Length	3.1mm
Model	QH8KC5TCR
Width	0.85mm
Mount Type	Surface
Series	QH8KC5
Maximum Operating Temperature	150°C
Package Type	TSMT-8
Minimum Operating Temperature	-55°C
Pin Count	8
Channel Type	N
Maximum Continuous Drain Current Id	3A
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	90mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	1.5W
Typical Gate Charge Qg @ Vgs	3.1nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1.2V

Key Features

This MOSFET supports a maximum continuous drain current of 3 amperes.
It operates with a maximum drain-source voltage of 60 volts.
The device features an enhancement mode channel for efficient switching.
Small surface mount TSMT-8 package allows for compact PCB designs.
Maximum drain-source resistance is rated at 90 milliohms, reducing power losses.
Maximum power dissipation of 1.5 watts supports stable operation under load.
Operates reliably within -55°C to 150°C temperature range, suitable for industrial use.
Typical gate charge at Vgs is low at 3.1 nanocoulombs, enabling fast switching.

Product Description

ROHM QH8KC5TCR is a dual N-Channel MOSFET designed for use in industrial automation equipment and motor control applications requiring a 60 V withstand voltage. This device is housed in a compact 8-pin TSMT-8 surface mount package optimized for low power consumption and efficiency. It supports a continuous drain current up to 3 A with a low on-resistance of 90 mΩ, which contributes to improved energy savings and thermal performance.

This MOSFET operates in enhancement mode and features a maximum power dissipation of 1.5 W. It reliably functions in a wide temperature range from -55°C to 150°C, making it suitable for harsh industrial and manufacturing environments. The typical gate charge of 3.1 nC at Vgs allows fast switching, while the maximum gate-source voltage tolerance of 20 V ensures protective robustness for varied circuit designs.

The device is ideal for 24 V input equipment such as factory automation systems and base station motors. Its small form factor (3.1 mm length, 2.9 mm height, 0.85 mm width) facilitates compact PCB layouts and easy integration. The ROHM QH8KC5TCR is lead-free with Pb-free plating and is compliant with RoHS and halogen-free standards, supporting environmentally responsible manufacturing.

This MOSFET supports a maximum continuous drain current of 3 amperes. Operates with a maximum drain-source voltage of 60 volts. Features an enhancement mode N-Channel for effective switching. Small surface mount TSMT-8 package for compact PCB design.

Low drain-source resistance at 90 milliohms reduces power dissipation. Maximum power dissipation rating of 1.5 watts. Wide operating temperature range from -55°C to 150°C. Typical gate charge at Vgs is 3.1 nanocoulombs for fast switching.

Maximum gate-source voltage of 20 volts for device protection. Compact dimensions facilitate integration in dense assemblies.

The QH8KC5TCR MOSFET is widely suited for industrial, manufacturing, and HVAC applications where efficient power management and robust durability are critical. Its design aligns with modern industrial standards ensuring reliable performance. Explore more semiconductor options on EnvMart to optimize your electronic component procurement.