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Nexperia Small Signal NPN Transistor 100 mA 30 V 4-Pin SOT-143B BCV61A,215

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Nexperia Small Signal NPN Transistor 100 mA 30 V 4-Pin SOT-143B BCV61A,215

Name: Nexperia Small Signal NPN Transistor 100 mA 30 V 4-Pin SOT-143B BCV61A,215
Brand: Nexperia
SKU: 201995
Price: 0.16 USD
Availability: InStock

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Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin	India
Brand	Nexperia
Height	1.1mm
Length	3mm
Model	BCV61A,215
Width	2.5mm
Mount Type	Surface
Series	BCV61
Maximum Operating Temperature	150°C
Package Type	SOT-143B
Minimum Operating Temperature	0°C
Standards/Approvals	RoHS
Pin Count	4
Maximum Collector Emitter Voltage Vceo	30V
Minimum DC Current Gain hFE	100
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	6V
Maximum Collector Base Voltage VCBO	30V
Maximum Power Dissipation Pd	250mW
Maximum DC Collector Current Idc	100mA
Transistor Configuration	Current Mirror
Maximum Transition Frequency ft	100MHz
NXP BCV61A Dual NPN Bipolar Transistor, 100 mA, 30 V, 4-Pin SOT-143BBrand	NXP

Key Features

Maximum DC Collector Current of 100 mA supports various low power applications.
Maximum Collector Emitter Voltage of 30 V provides adequate voltage withstand for signal amplification.
Compact surface mount 4-pin SOT-143B package ensures space-saving PCB designs.
Low power dissipation rating of 250 mW suits small signal switching requirements.
Operating temperature range from 0°C to 150°C ensures reliable performance under varying conditions.
Minimum DC current gain (hFE) of 100 enables effective signal amplification in current mirror configuration.
Maximum transition frequency (fT) up to 100 MHz supports high frequency signal applications.
NPN transistor polarity matches standard bipolar transistor configurations.

Product Description

Nexperia BCV61A,215 is a small signal NPN bipolar transistor ideal for low-power amplification and switching applications. Rated for a maximum DC collector current of 100 mA and collector-emitter voltage limit of 30 V, it offers reliable performance in a compact 4-pin SOT-143B surface mount package.

Designed with a current mirror transistor configuration, this NPN transistor features a minimum DC current gain (hFE) of 100, allowing efficient current control and amplification. It operates effectively over a temperature range of 0°C to 150°C, making it suitable for a range of industrial, electronic, and communication equipment applications.

With a maximum power dissipation of 250 mW and high transition frequency of 100 MHz, the BCV61A,215 transistor supports fast switching in signal processing circuits. Its compact dimensions (3 mm length, 2.5 mm width, and 1.1 mm height) make it ideal for densely packed printed circuit boards (PCBs).

This transistor complies with RoHS standards, ensuring environmentally responsible manufacturing. The 4-pin layout simplifies PCB assembly and integration in various electronic modules and devices.

Typical use cases include signal amplification, switching circuits, sensor interfaces, and other low power electronic designs in industrial, laboratory, automotive, and consumer electronics sectors.

Maximum DC Collector Current of 100 mA. Maximum Collector Emitter Voltage of 30 V. 4-Pin SOT-143B surface mount package. Current mirror transistor configuration. Minimum DC Current Gain (hFE) of 100 and maximum transition frequency of 100 MHz.

Operating temperature range from 0°C to 150°C. Power dissipation rating of 250 mW. Compact size and RoHS compliant. Explore more semiconductor and bipolar transistor products to suit your electronic design requirements on EnvMart.

Explore more products in our Bipolar Transistors category.