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| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Height | 1.1mm |
| Length | 3mm |
| Model | BCV61A,215 |
| Width | 2.5mm |
| Mount Type | Surface |
| Series | BCV61 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-143B |
| Minimum Operating Temperature | 0°C |
| Standards/Approvals | RoHS |
| Pin Count | 4 |
| Maximum Collector Emitter Voltage Vceo | 30V |
| Minimum DC Current Gain hFE | 100 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 6V |
| Maximum Collector Base Voltage VCBO | 30V |
| Maximum Power Dissipation Pd | 250mW |
| Maximum DC Collector Current Idc | 100mA |
| Transistor Configuration | Current Mirror |
| Maximum Transition Frequency ft | 100MHz |
Nexperia BCV61A,215 is a small signal NPN bipolar transistor designed for electronic component applications requiring switching and amplification of currents up to 100 mA and collector emitter voltage up to 30 V. Packaged in a 4-pin SOT-143B surface mount package, this transistor provides excellent electrical characteristics combined with a compact form factor for efficient PCB layout.
This device is configured as a current mirror transistor, making it suitable for analog circuit designs and precision current control applications. The transistor offers a maximum collector power dissipation of 250 mW and a minimum DC current gain (hFE) of 100, ensuring reliable signal amplification in a variety of circuits.
With a maximum transition frequency of 100 MHz, the BCV61A,215 supports high-frequency operation commonly needed in communication and signal processing devices. Its electrical specifications include a maximum collector base voltage and collector emitter voltage of 30 V, and emitter base voltage of 6 V, providing stable operation within the specified limits.
The transistor operates effectively across an extended temperature range from 0°C to 150°C, making it suitable for use in demanding industrial, consumer electronics, and automotive applications where thermal reliability is critical.
Physical dimensions are compact, with a length of 3 mm, width of 2.5 mm, and height of 1.1 mm, ensuring that the transistor occupies minimal board space. The product fully complies with RoHS standards, reflecting environmental safety and quality assurance.
Maximum DC collector current of 100 mA for reliable signal switching. Collector emitter voltage rating of 30 V for stable circuit operation. 4-pin SOT-143B surface mount package for space-saving PCB mounting. Current mirror transistor configuration for analog circuitry.
Power dissipation capability of 250 mW under normal operating conditions. DC current gain (hFE) exceeding 100 for efficient amplification. Operating temperature range from 0°C to 150°C for varied environments. Transition frequency up to 100 MHz for high-frequency applications.
Compact dimensions with 3 mm length, 2.5 mm width, and 1.1 mm height.
This Nexperia transistor is widely used in electronics manufacturing, telecommunications, instrumentation, and industrial equipment. Its specifications make it ideal for applications requiring precise current control and reliable amplification in a small footprint.
Explore more electronic components and Bipolar Transistors on EnvMart to enhance your project and production capabilities.
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