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| Country of Origin | Malaysia |
|---|---|
| Brand | Infineon |
| Height | 15.95mm |
| Length | 10.2mm |
| Model | IDH08G120C5XKSA1 |
| Width | 4.5mm |
| Mount Type | Through Hole |
| Series | IDH08G120C5 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Continuous Forward Current If | 22.8A |
| Peak Reverse Repetitive Voltage Vrrm | 1200V |
| Diode Configuration | Single |
| Rectifier Type | Schottky |
| Peak Reverse Current Ir | 210μA |
| Peak Non-Repetitive Forward Surge Current Ifsm | 70A |
| Maximum Forward Voltage Vf | 2.85V |
The Infineon IDH08G120C5XKSA1 is a cutting-edge silicon carbide (SiC) Schottky diode designed for high efficiency and reliable power conversion. It features a single diode configuration with a maximum continuous forward current rating of 22.8 A and peak reverse voltage of 1200 V in a rugged 3-pin TO-220 through-hole package.
Its thinQ! Generation 5 wafer technology enhances thermal conductivity and increases breakdown field strength, resulting in superior device efficiency and thermal stability. This makes it especially suitable for demanding industrial and commercial applications including telecom power supplies, uninterruptible power supplies (UPS), motor drive inverters, solar energy systems, and high-end servers.
The diode supports peak forward surge currents up to 70 A and operates reliably in a wide temperature range from -55°C up to 175°C. Its compact form factor with dimensions 15.95 mm height, 10.2 mm length, and 4.5 mm width ensures flexible integration on printed circuit boards where space is limited.
This device offers low forward voltage drop of 2.85 V promoting energy-efficient conduction and reduced power dissipation. It is RoHS compliant and manufactured in Malaysia under stringent quality controls to guarantee performance stability.
Applications include industrial power conversion, energy management systems, renewable energy inverters, lighting, and other environments requiring robust high-voltage Schottky Diodes with excellent thermal characteristics.
This diode features single diode configuration with through-hole mount type. It supports peak reverse repetitive voltage of 1200 volts for high-voltage applications. Peak non-repetitive forward surge current is 70 A ensuring robustness in transient conditions.
Maximum forward voltage drop of 2.85 V ensures efficient conduction with minimal losses. Operating temperature range from -55°C to 175°C enables usage in harsh thermal environments. Compact dimensions of 15.95 mm height, 10.2 mm length, and 4.5 mm width help with space-constrained PCB layouts.
Special silicon carbide (SiC) Schottky technology improves thermal characteristics and breakdown strength. Ideal for telecom SMPS, servers, UPS systems, motor drives, solar inverters, and lighting applications. Explore EnvMart's comprehensive inventory of semiconductor components and power devices for your industrial and laboratory requirements.
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