ROHM P-Channel MOSFET 200 mA, 20 V Enhancement Mode, 3-Pin SOT-323 RU1C002ZPTCL

ROHM RU1C002ZPTCL is a P-Channel MOSFET designed for reliable low-power switching in electronic circuits. Featuring an enhancement mode channel with a maximum continuous drain current of 200 mA and a maximum drain-source voltage of 20 V, this component suits applications requiring efficient power switching and compact form factor.

The device comes in a surface mount 3-pin SOT-323 package, with dimensions of 2.1 mm (length) x 1.35 mm (width) x 1 mm (height), making it ideal for space-constrained electronic assemblies. Its low maximum drain-source resistance of 1.2 ohms ensures minimal power loss during operation.

Functional characteristics include a typical gate charge of 1.4 nC at Vgs, enabling fast switching transitions and improved efficiency. The transistor supports a gate-source voltage range of -10 V to +10 V and maintains robust operation over a broad temperature range (-55°C to 150°C).

This MOSFET conforms to RoHS standards, highlighting compliance with environmental and safety norms in semiconductor manufacturing. Enhancement mode, P-Channel MOSFET in SOT-323 package. Maximum continuous drain current: 200 mA.

Maximum drain-source voltage: 20 V. Low on-resistance: 1.2 Ω. Wide operating temperature range (-55°C to 150°C). Typical gate charge: 1.4 nC. Gate-source voltage rating: ±10 V. Forward voltage: 1.2 V. RoHS compliant.

This product is suited for various industrial and electronic use cases including power management circuits, signal switching, and low-power amplification. Ideal for applications in electronics manufacturing, semiconductors, power supplies, and embedded systems.

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