Nexperia Low Saturation Voltage PNP Bipolar Transistor 3 A, 50 V, 4-Pin UPAK PBSS5350X,115

Nexperia PBSS5350X,115 is a low saturation voltage PNP bipolar junction transistor designed for efficient switching and digital electronic applications. This surface-mount transistor comes in a compact 4-pin UPAK package with dimensions of 4.6 mm length, 2.5 mm width, and 1.5 mm height, integrating into modern PCB designs easily.

It supports a maximum DC collector current of 3 A and can withstand a collector emitter voltage up to 50 V, making it suitable for medium power electronic circuits. The transistor's minimum current gain (hFE) of 80 and maximum power dissipation of 1.6 W ensure reliable performance under diverse operating conditions.

Additional electrical characteristics include a maximum collector base voltage of 50 V and a maximum emitter base voltage of 5 V, along with a maximum transition frequency of 100 MHz. The device operates efficiently in a temperature range from -65°C to 150°C.

This transistor is manufactured in China and does not conform to any automotive or specific industry standards but offers great efficiency and low heat generation due to its reduced losses, making it an excellent choice for industrial, laboratory, and electronic manufacturing use cases.

Maximum DC collector current of 3 A. Maximum collector emitter voltage of 50 V. Compact 4-pin UPAK surface mount package. 1.6 W maximum power dissipation. Low saturation voltage suitable for digital and switching applications.

Wide operating temperature range from -65°C to 150°C. High current gain (hFE) of at least 80. Maximum transition frequency of 100 MHz.

For optimal procurement and design efficiency, consider Nexperia's PBSS5350X,115 bipolar transistor available for industrial-scale production and electronic applicative environments. Explore additional Nexperia semiconductor products to complement your assembly needs.

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