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Nexperia NPN Transistor, 2 A Collector Current, 50 V Collector-Emitter Voltage, Surface Mount SOT-23 PBSS4350T,215

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin China
Brand Nexperia
Height 1.1mm
Length 3mm
Model PBSS4350T,215
Width 2.5mm
Mount Type Surface
Series PBSS4350T
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -65°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo 50V
Minimum DC Current Gain hFE 100
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 50V
Maximum Power Dissipation Pd 1.2W
Maximum DC Collector Current Idc 2A
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz
onsemi NJD2873T4G Transistor, 2 A NPN, 50 V dc, 3-Pin DPAKBrand onsemi

Key Features

  • Compact SOT-23 package with 3 pins for surface mounting.
  • Maximum power dissipation of 1.2 W ensuring reliable operation.
  • High DC current gain with a minimum hFE of 100.
  • Operating temperature range from -65°C to 150°C for versatility.
  • Low saturation voltage minimizing power loss.
  • Maximum transition frequency of 100 MHz for fast switching.
  • Designed for use in switching and digital circuits.
  • Lead-free and RoHS compliant for environmental safety.

Product Description

Nexperia PBSS4350T,215 NPN Transistor is designed for high efficiency in switching and digital applications. This surface-mount device offers a maximum DC collector current of 2 A and a maximum collector-emitter voltage of 50 V, making it suitable for compact circuit designs.

The transistor is housed in a small SOT-23 package measuring 3 mm in length, 2.5 mm in width, and 1.1 mm in height, facilitating space-saving PCB layouts. It has a maximum power dissipation rating of 1.2 W, providing reliable performance under load.

The device features a minimum DC current gain (hFE) of 100 and a maximum transition frequency of 100 MHz, supporting fast switching with reduced losses. It can operate within a wide temperature range from -65°C up to 150°C, suitable for varying industrial environments.

Low collector-emitter saturation voltage reduces heat generation, contributing to greater efficiency in electronic circuits. The transistor is RoHS-compliant, ensuring it meets current environmental standards.

Compact SOT-23 package with 3 pins for surface mounting. Maximum collector current of 2 A and voltage rating of 50 V. Power dissipation rated at 1.2 W for durability. High DC current gain with minimum hFE of 100. Wide operating temperature range from -65°C to 150°C.

Maximum transition frequency of 100 MHz for rapid response. Low saturation voltage for enhanced efficiency. RoHS-compliant and environmentally safe. Manufactured in China following strict quality standards.

This transistor is ideal for industrial and electronic applications requiring reliable switching performance, including power management, amplification, and signal processing within compact electronic modules.

For more advanced electronic components, browse our Semiconductor and Bipolar Transistors category on EnvMart.

Nexperia NPN Transistor, 2 A Collector Current, 50 V Collector-Emitter Voltage, Surface Mount SOT-23 PBSS4350T,215
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Frequently Asked Questions

The maximum DC collector current for this NPN transistor is 2 A.

The maximum collector-emitter voltage rating is 50 V.

It has a maximum power dissipation rating of 1.2 W.

This transistor operates within a temperature range from -65°C to 150°C.

The minimum DC current gain (hFE) is 100.

The maximum transition frequency is 100 MHz.

The SOT-23 package measures 3 mm in length, 2.5 mm in width, and 1.1 mm in height.

The PBSS4350T,215 has 3 pins for surface mounting.

Yes, it is RoHS compliant, ensuring it meets current environmental standards.

This model supports surface mounting.

The maximum emitter-base voltage (VEBO) is 5 V.

It is designed for high efficiency in switching and digital applications, including power management and amplification.

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