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| Country of Origin | China |
|---|---|
| Brand | Nexperia |
| Height | 1.1mm |
| Length | 3mm |
| Model | PBSS4350T,215 |
| Width | 2.5mm |
| Mount Type | Surface |
| Series | PBSS4350T |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -65°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 50V |
| Minimum DC Current Gain hFE | 100 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 50V |
| Maximum Power Dissipation Pd | 1.2W |
| Maximum DC Collector Current Idc | 2A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 100MHz |
| onsemi NJD2873T4G Transistor, 2 A NPN, 50 V dc, 3-Pin DPAKBrand | onsemi |
Nexperia PBSS4350T,215 NPN Transistor is designed for high efficiency in switching and digital applications. This surface-mount device offers a maximum DC collector current of 2 A and a maximum collector-emitter voltage of 50 V, making it suitable for compact circuit designs.
The transistor is housed in a small SOT-23 package measuring 3 mm in length, 2.5 mm in width, and 1.1 mm in height, facilitating space-saving PCB layouts. It has a maximum power dissipation rating of 1.2 W, providing reliable performance under load.
The device features a minimum DC current gain (hFE) of 100 and a maximum transition frequency of 100 MHz, supporting fast switching with reduced losses. It can operate within a wide temperature range from -65°C up to 150°C, suitable for varying industrial environments.
Low collector-emitter saturation voltage reduces heat generation, contributing to greater efficiency in electronic circuits. The transistor is RoHS-compliant, ensuring it meets current environmental standards.
Compact SOT-23 package with 3 pins for surface mounting. Maximum collector current of 2 A and voltage rating of 50 V. Power dissipation rated at 1.2 W for durability. High DC current gain with minimum hFE of 100. Wide operating temperature range from -65°C to 150°C.
Maximum transition frequency of 100 MHz for rapid response. Low saturation voltage for enhanced efficiency. RoHS-compliant and environmentally safe. Manufactured in China following strict quality standards.
This transistor is ideal for industrial and electronic applications requiring reliable switching performance, including power management, amplification, and signal processing within compact electronic modules.
For more advanced electronic components, browse our Semiconductor and Bipolar Transistors category on EnvMart.
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