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Nexperia NPN Transistor PBSS4160T,215, 900 mA Collector Current, 60 V Collector-Emitter Voltage, 3-Pin SOT-23 Package

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin China
Brand Nexperia
Height 1.1mm
Length 3mm
Model PBSS4160T,215
Width 2.5mm
Mount Type Surface
Series PBSS4160T
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -65°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo 60V
Minimum DC Current Gain hFE 100
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 80V
Maximum Power Dissipation Pd 1.25W
Maximum DC Collector Current Idc 900mA
Transistor Configuration Single
Maximum Transition Frequency ft 220MHz
onsemi NSS60201LT1G Digital Transistor, 60 V dc NPN Surface SOT-23, 3-PinBrand onsemi

Key Features

  • The transistor is designed for low saturation voltage with high efficiency in switching and digital circuits.
  • Maximum collector base voltage rating is 80 V ensuring robust performance.
  • It has a maximum transition frequency of 220 MHz suitable for high-speed applications.
  • The device supports power dissipation up to 1.25 W.
  • Operating temperature range is wide from -65°C to 150°C for reliability under harsh conditions.
  • Surface mount package (SOT-23) with compact dimensions of 3 mm length, 2.5 mm width, and 1.1 mm height.
  • Minimum DC current gain (hFE) rating of 100 enhances amplification efficiency.
  • Low emitter base voltage maximum of 5 V improves switching characteristics.

Product Description

Nexperia PBSS4160T,215 is a high-performance NPN bipolar junction transistor optimized for low saturation voltage and efficient switching applications. This transistor supports a maximum DC collector current of 900 mA and a collector-emitter voltage rating of 60 V, housed in a small 3-pin SOT-23 surface-mount package, making it ideal for compact electronic circuit designs.

Engineered for digital and switching tasks, the PBSS4160T series reduces losses significantly resulting in lower heat generation and improved circuit efficiency. The device’s maximum collector base voltage of 80 V and maximum power dissipation of 1.25 W ensure robustness and reliable operation under demanding electrical stresses.

Its high transition frequency of 220 MHz makes it well-suited for high-speed applications, while the minimum DC current gain of 100 guarantees effective signal amplification. The transistor operates reliably over an extended temperature range from -65°C to 150°C, ensuring performance stability in harsh environments.

The compact SOT-23 package with precise dimensions of 3 mm length, 2.5 mm width, and 1.1 mm height allows for efficient PCB space utilization, suitable for surface mount technology assembly. Additionally, this transistor complies with RoHS environmental regulations, reflecting its safe and modern manufacturing standards.

Low saturation voltage NPN transistor for switching and digital applications. 900 mA max collector current and 60 V max collector-emitter voltage. High-frequency operation up to 220 MHz for fast switching. Compact 3-pin SOT-23 surface mount package with small footprint.

Wide operating temperature range from -65°C to 150°C. Minimum DC gain of 100 for efficient amplification. Power dissipation rating of 1.25 W for reliable operation. RoHS compliant, environmentally friendly design. Manufactured in China with high-quality standards.

This transistor is extensively used in industrial electronics, telecommunications, computer hardware, automotive electronics, and consumer devices that require efficient, low-loss digital switching components. Nexperia offers a comprehensive range of bipolar transistors including PBSS4160T for versatile design requirements.

Explore more Nexperia semiconductor products and Bipolar Transistors on EnvMart to find components tailored to your precise industrial and commercial electronics projects.

Nexperia NPN Transistor PBSS4160T,215, 900 mA Collector Current, 60 V Collector-Emitter Voltage, 3-Pin SOT-23 Package
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Frequently Asked Questions

The maximum collector current for this transistor is 900 mA.

The collector-emitter voltage rating is 60 V.

It has a maximum transition frequency of 220 MHz, making it suitable for high-speed applications.

The SOT-23 package has dimensions of 3 mm length, 2.5 mm width, and 1.1 mm height.

The operating temperature range is from -65°C to 150°C.

The maximum power dissipation rating is 1.25 W.

The minimum DC current gain (hFE) rating is 100.

The maximum emitter-base voltage is 5 V.

Yes, it complies with RoHS environmental regulations.

This transistor uses a surface mount type (SOT-23).

It is suitable for use in industrial electronics, telecommunications, computer hardware, automotive electronics, and consumer devices requiring efficient digital switching.

The maximum collector-base voltage rating is 80 V.

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