Nexperia Low Saturation Voltage NPN Bipolar Transistor 900mA 60V 3-Pin SOT-23 PBSS4160T,215

Nexperia PBSS4160T,215 is a low saturation voltage NPN bipolar junction transistor designed for efficient switching and digital applications in electronic circuits. It features a maximum DC collector current rating of 900 mA and a collector emitter voltage rating of 60 V, making it suitable for medium power applications. Packaged in a compact 3-pin SOT-23 surface mount configuration, it is ideal for saving PCB space without compromising performance.

This transistor supports a high maximum transition frequency of 220 MHz and offers maximum power dissipation of 1.25 W, ensuring fast switching speeds and thermal stability. The low collector-emitter saturation voltage results in reduced power loss and heat generation, improving overall circuit efficiency.

The device operates reliably over a wide temperature range from -65°C to 150°C and is RoHS compliant, reflecting adherence to environmental standards. It features a single NPN transistor configuration with a minimum DC current gain (hFE) of 100, enabling effective amplification in various electronic applications.

Its pin count of 3 and small dimensions (Length: 3 mm, Width: 2.5 mm, Height: 1.1 mm) make it suitable for compact and high-density circuit designs. Manufactured in China, this transistor is part of the PBSS4160T series by Nexperia, ensuring quality and consistency.

Designed for efficient switching and digital applications. Maximum DC collector current is 900 mA for high current capacity. Maximum collector emitter voltage of 60 V supports medium voltage operations. Compact 3-pin SOT-23 surface mount package saves PCB space.

Low collector-emitter saturation voltage reduces power loss and heat. Supports maximum power dissipation of 1.25 W. High transition frequency of 220 MHz for fast switching. Operating temperature range from -65°C to 150°C ensures reliability in harsh environments.

RoHS compliant and manufactured in China. Transistor configuration is single NPN type with minimum DC current gain of 100.

This transistor is ideal for applications in industrial electronics, digital circuits, communication devices, and other general-purpose switching uses. It offers benefits in thermal management and overall efficiency for various manufacturing and electronics design implementations.

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