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Nexperia Low Saturation Voltage NPN Transistor 1 A 40 V 3-Pin SOT-23 PBSS4140T,215

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Nexperia Low Saturation Voltage NPN Transistor 1 A 40 V 3-Pin SOT-23 PBSS4140T,215

Name: Nexperia Low Saturation Voltage NPN Transistor 1 A 40 V 3-Pin SOT-23 PBSS4140T,215
Brand: Nexperia
SKU: 193809
Price: 0.12 USD
Availability: InStock

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Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin	China
Brand	Nexperia
Height	1.1mm
Length	3mm
Model	PBSS4140T,215
Width	2.5mm
Mount Type	Surface
Series	PBSS4140T
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-65°C
Standards/Approvals	RoHS
Pin Count	3
Maximum Collector Emitter Voltage Vceo	40V
Minimum DC Current Gain hFE	200
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	5V
Maximum Collector Base Voltage VCBO	40V
Maximum Power Dissipation Pd	450mW
Maximum DC Collector Current Idc	1A
Transistor Configuration	Single
Maximum Transition Frequency ft	150MHz

Key Features

This NPN bipolar junction transistor features a maximum power dissipation of 450 mW.
It has a minimum DC current gain (hFE) of 200, ensuring efficient amplification.
The device operates reliably from -65°C to 150°C ambient temperatures.
Low collector-emitter saturation voltage reduces heat generation and improves switching efficiency.
The transistor supports a maximum transition frequency of 150 MHz for high-speed applications.
It is surface mount compatible with a small footprint for compact PCB layouts.
Designed for use in switching and digital circuits requiring low saturation voltage and high current capacity.
Package dimensions are 3 mm length, 2.5 mm width, and 1.1 mm height, supporting space-saving applications.

Product Description

Nexperia PBSS4140T,215 transistor is a low saturation voltage NPN bipolar junction transistor designed for high efficiency switching and amplification applications. It is rated to support a maximum DC collector current of 1 A and withstand a maximum collector-emitter voltage of 40 V, making it suitable for a variety of electronic circuits that demand reliable performance with minimal power loss.

The transistor's low saturation voltage characteristic reduces power losses during conduction, which results in lower heat dissipation and enhances overall system efficiency. It has a high minimum DC current gain (hFE) of 200, ensuring good amplification performance. The device can operate in a wide temperature range from -65°C up to 150°C, adding robustness for industrial and commercial applications.

Enclosed in a compact 3-pin SOT-23 surface-mount package with dimensions of 3 mm length, 2.5 mm width, and 1.1 mm height, this transistor supports space-constrained PCB designs. Additional technical features include a maximum transition frequency of 150 MHz, suitable for high-frequency switching and signal amplification.

The transistor's maximum power dissipation is 450 mW, aligning with small-signal transistor applications in consumer electronics, communication devices, computing hardware, and industrial controls.

Maximum DC collector current: 1 A. Maximum collector-emitter voltage: 40 V. Low saturation voltage for efficient switching. Minimum DC current gain (hFE): 200. Wide operating temperature range: -65°C to 150°C. Compact 3-pin SOT-23 surface mount package.

Maximum power dissipation: 450 mW. Maximum transition frequency: 150 MHz. RoHS compliant and made in China.

This NPN transistor is commonly used in industrial, communication, computing, and general-purpose electronic circuits that require efficient switching performance with low thermal losses. It is suitable for designers looking for reliable small-signal transistor components capable of handling moderate currents and voltages in compact footprints.

Explore more Bipolar Transistors and other semiconductor components on EnvMart for a broad range of industrial and electronic equipment needs.