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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 9.15mm |
| Length | 10.4mm |
| Model | BDW93C |
| Mount Type | Through Hole |
| Series | BDW93C |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 12A |
| Maximum Collector Emitter Voltage Vceo | 100V |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain hFE | 100 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V |
| Maximum Collector Base Voltage VCBO | 100V |
| Maximum Collector Cut-off Current | 0.1mA |
| Maximum Power Dissipation Pd | 80W |
| STMicroelectronics BDW93C NPN Darlington Transistor, 12 A 100 V HFE | 100, 3-Pin TO-220Brand: STMicroelectronics |
STMicroelectronics BDW93C is a high-performance NPN Darlington Transistor designed for industrial and power electronics applications. This transistor supports a maximum continuous collector current of 12 A and a collector emitter voltage of 100 V, providing robust conduction for medium power switching and amplification tasks. Featuring a minimum DC current gain (hFE) of 100, it ensures excellent current amplification characteristics suitable for precision control circuits.
Housed in a 3-Pin TO-220 through-hole package, the BDW93C offers easy mounting and efficient heat dissipation suited for demanding electronic assemblies. It features a maximum power dissipation of 80 W which allows for operation under considerable load without thermal failure. Its operational temperature range from -65°C to 150°C ensures reliable performance in harsh industrial environments.
The transistor's NPN polarity, collector base voltage rating of 100 V, emitter base voltage of 5 V, and collector cut-off current of 0.1 mA make it suitable for various applications including power amplifiers, switching regulators, and motor control circuits.
Typical uses include industrial automation systems, power supplies, and general-purpose electronic circuits requiring sturdy, high-current switching elements. The compact dimensions enhance design flexibility in dense PCB layouts. This transistor does not carry any specific certifications but meets general semiconductor standards for quality and reliability.
High current handling capability with a maximum continuous collector current of 12 A. Maximum collector emitter voltage rating of 100 V. Minimum DC current gain (hFE) of 100 for strong amplification. Through-hole TO-220 package for ease of mounting and heat management.
Power dissipation capacity of 80 W for handling high loads. Wide operating temperature range from -65°C to 150°C. NPN transistor polarity suitable for power switching applications. Compact size with height 9.15 mm and length 10.4 mm.
Maximum collector emitter saturation voltage of 2 V efficient switching. Low collector cut-off current of 0.1 mA reducing leakage losses. Explore more semiconductor and electronic components by STMicroelectronics at EnvMart, your trusted source for industrial electronics supplies.
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