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STMicroelectronics NPN Darlington Transistor 12 A 100 V HFE 100 3-Pin TO-220 BDW93C

Category Darlington Transistor Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 9.15mm
Length 10.4mm
Model BDW93C
Mount Type Through Hole
Series BDW93C
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Continuous Collector Current Ic 12A
Maximum Collector Emitter Voltage Vceo 100V
Number of Elements per Chip 1
Minimum DC Current Gain hFE 100
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Emitter Saturation Voltage VceSAT 2V
Maximum Collector Base Voltage VCBO 100V
Maximum Collector Cut-off Current 0.1mA
Maximum Power Dissipation Pd 80W
STMicroelectronics BDW93C NPN Darlington Transistor, 12 A 100 V HFE 100, 3-Pin TO-220Brand: STMicroelectronics

Key Features

  • High current handling capability with a maximum continuous collector current of 12 A.
  • Collector emitter voltage maximum rating of 100 V for versatile power applications.
  • Minimum DC current gain (hFE) of 100 ensuring reliable amplification.
  • Robust TO-220 through-hole package type suitable for easy mounting and heat dissipation.
  • Maximum power dissipation capacity of 80 W enabling efficient thermal management.
  • Operational temperature range from -65°C to 150°C for industrial use.
  • NPN polarity transistor designed for high-voltage power switching and amplification.
  • Maximum emitter base voltage rating of 5 V for safe electrical operation.

Product Description

STMicroelectronics BDW93C is a high-performance NPN Darlington Transistor designed for industrial and power electronics applications. This transistor supports a maximum continuous collector current of 12 A and a collector emitter voltage of 100 V, providing robust conduction for medium power switching and amplification tasks. Featuring a minimum DC current gain (hFE) of 100, it ensures excellent current amplification characteristics suitable for precision control circuits.

Housed in a 3-Pin TO-220 through-hole package, the BDW93C offers easy mounting and efficient heat dissipation suited for demanding electronic assemblies. It features a maximum power dissipation of 80 W which allows for operation under considerable load without thermal failure. Its operational temperature range from -65°C to 150°C ensures reliable performance in harsh industrial environments.

The transistor's NPN polarity, collector base voltage rating of 100 V, emitter base voltage of 5 V, and collector cut-off current of 0.1 mA make it suitable for various applications including power amplifiers, switching regulators, and motor control circuits.

Typical uses include industrial automation systems, power supplies, and general-purpose electronic circuits requiring sturdy, high-current switching elements. The compact dimensions enhance design flexibility in dense PCB layouts. This transistor does not carry any specific certifications but meets general semiconductor standards for quality and reliability.

High current handling capability with a maximum continuous collector current of 12 A. Maximum collector emitter voltage rating of 100 V. Minimum DC current gain (hFE) of 100 for strong amplification. Through-hole TO-220 package for ease of mounting and heat management.

Power dissipation capacity of 80 W for handling high loads. Wide operating temperature range from -65°C to 150°C. NPN transistor polarity suitable for power switching applications. Compact size with height 9.15 mm and length 10.4 mm.

Maximum collector emitter saturation voltage of 2 V efficient switching. Low collector cut-off current of 0.1 mA reducing leakage losses. Explore more semiconductor and electronic components by STMicroelectronics at EnvMart, your trusted source for industrial electronics supplies.

STMicroelectronics NPN Darlington Transistor 12 A 100 V HFE 100 3-Pin TO-220 BDW93C
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Frequently Asked Questions

The maximum continuous collector current for the BDW93C is 12 A.

This model has a maximum collector-emitter voltage rating of 100 V.

The minimum DC current gain (hFE) for the BDW93C is 100.

It is housed in a TO-220 through-hole package type, which allows for easy mounting and efficient heat dissipation.

The maximum power dissipation capacity is 80 W, enabling effective thermal management under load.

The operational temperature range is from -65°C to 150°C, making it suitable for industrial applications.

The maximum emitter-base voltage rating for this transistor is 5 V.

The dimensions are 9.15 mm in height and 10.4 mm in length.

The maximum collector cut-off current is 0.1 mA, which helps reduce leakage losses.

This transistor is suitable for applications such as power amplifiers, switching regulators, and motor control circuits.

The maximum collector-emitter saturation voltage is 2 V, which is efficient for switching applications.

The BDW93C has a pin count of 3, allowing for versatile connections in circuits.

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