Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
24/7 Customer Support

Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries

24/7 Customer Support
Save up to 28% with GST Input

Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries

Lowest Price Challenge
# Lowest Price Challenge

If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon

Lowest Price Challenge
100% Original Products

Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase

STMicroelectronics NPN Darlington Transistor 10 A 100 V TO-220 Package BDX33C

Category Darlington Transistor Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 9.15mm
Length 10.4mm
Model BDX33C
Mount Type Through Hole
Series BDX33C
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Continuous Collector Current Ic 10A
Maximum Collector Emitter Voltage Vceo 100V
Number of Elements per Chip 1
Minimum DC Current Gain hFE 750
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Emitter Saturation Voltage VceSAT 2.5V
Maximum Collector Base Voltage VCBO 100V
Maximum Collector Cut-off Current 0.2mA
Maximum Power Dissipation Pd 70W
STMicroelectronics BDX33C NPN Darlington Transistor, 10 A 100 V HFE 750, 3-Pin TO-220Brand: STMicroelectronics

Key Features

  • Supports a maximum power dissipation of 70 W ensuring robust performance.
  • Features a minimum DC current gain (hFE) of 750 for high amplification.
  • Designed for through-hole mounting with three pins in a TO-220 package.
  • Operates reliably in temperature range from -65°C up to 150°C.
  • Has a maximum emitter base voltage of 5 V and maximum collector base voltage of 100 V.
  • Maximum collector emitter saturation voltage is 2.5 V for efficient switching.
  • Single element per chip with NPN polarity suitable for power amplification applications.
  • Measures 9.15 mm in height and 10.4 mm in length for compact PCB integration.

Product Description

STMicroelectronics BDX33C is a high-performance NPN Darlington transistor designed for power amplification and switching applications. It supports a continuous collector current of 10 A and can withstand a collector emitter voltage of up to 100 V, making it well suited for medium power electronic circuits.

Encased in a durable TO-220 package with through-hole mounting, the transistor provides convenient mechanical stability and good heat dissipation, with a maximum power dissipation of 70 W. The device offers a minimum DC current gain (hFE) of 750, enabling efficient signal amplification in discrete semiconductor circuits.

This Darlington Transistor operates reliably across a broad temperature range from -65°C to 150°C, making it suitable for demanding industrial and commercial electronics operating environments.

Additional electrical characteristics include a maximum emitter base voltage of 5 V, collector base voltage of 100 V, and a collector emitter saturation voltage capped at 2.5 V to ensure energy-efficient operation.

The transistor features a single element per chip with NPN polarity and three pins, facilitating straightforward circuit design and integration. Physical dimensions of 9.15 mm height by 10.4 mm length ensure it fits compact designs.

Supports a maximum power dissipation of 70 W ensuring robust performance. Features a minimum DC current gain (hFE) of 750 for high amplification. Designed for through-hole mounting with three pins in a TO-220 package. Operates reliably in temperature range from -65°C up to 150°C.

Has a maximum emitter base voltage of 5 V and maximum collector base voltage of 100 V. Maximum collector emitter saturation voltage is 2.5 V for efficient switching. Single element per chip with NPN polarity suitable for power amplification applications.

Measures 9.15 mm in height and 10.4 mm in length for compact PCB integration.

This transistor is ideal for industrial, consumer electronics, power supply regulation, and other electronic component manufacturing sectors requiring reliable power transistor solutions. Explore more semiconductor components and electronic devices within the EnvMart platform to meet diverse engineering needs.

STMicroelectronics NPN Darlington Transistor 10 A 100 V TO-220 Package BDX33C
Looking to purchase in bulk?
  • Purchase item in bulk quantity
  • Get best price for your business

Comments (0)

No customer reviews for the moment.

Related Products

Other Products from this brand

$0.70
$0.68 Save 3%
Tax included
Quantity
Delivery Time Delivered within 0-3 days
  • Global Payments 140+ CountriesGlobal Payments 140+ Countries
  • Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP WorldGlobal Shipping Fedex/UPS/DHL/Aramex/ BlueDart/Delhivery/DP World
  • 24/7 Customer Support Email/Chat/Telephonic Support24/7 Customer Support Email/Chat/Telephonic Support
$0.70
$0.68
Tax included