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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 9.15mm |
| Length | 10.4mm |
| Model | BDX33C |
| Mount Type | Through Hole |
| Series | BDX33C |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 10A |
| Maximum Collector Emitter Voltage Vceo | 100V |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain hFE | 750 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.5V |
| Maximum Collector Base Voltage VCBO | 100V |
| Maximum Collector Cut-off Current | 0.2mA |
| Maximum Power Dissipation Pd | 70W |
| STMicroelectronics BDX33C NPN Darlington Transistor, 10 A 100 V HFE | 750, 3-Pin TO-220Brand: STMicroelectronics |
STMicroelectronics BDX33C is a high-performance NPN Darlington transistor designed for power amplification and switching applications. It supports a continuous collector current of 10 A and can withstand a collector emitter voltage of up to 100 V, making it well suited for medium power electronic circuits.
Encased in a durable TO-220 package with through-hole mounting, the transistor provides convenient mechanical stability and good heat dissipation, with a maximum power dissipation of 70 W. The device offers a minimum DC current gain (hFE) of 750, enabling efficient signal amplification in discrete semiconductor circuits.
This Darlington Transistor operates reliably across a broad temperature range from -65°C to 150°C, making it suitable for demanding industrial and commercial electronics operating environments.
Additional electrical characteristics include a maximum emitter base voltage of 5 V, collector base voltage of 100 V, and a collector emitter saturation voltage capped at 2.5 V to ensure energy-efficient operation.
The transistor features a single element per chip with NPN polarity and three pins, facilitating straightforward circuit design and integration. Physical dimensions of 9.15 mm height by 10.4 mm length ensure it fits compact designs.
Supports a maximum power dissipation of 70 W ensuring robust performance. Features a minimum DC current gain (hFE) of 750 for high amplification. Designed for through-hole mounting with three pins in a TO-220 package. Operates reliably in temperature range from -65°C up to 150°C.
Has a maximum emitter base voltage of 5 V and maximum collector base voltage of 100 V. Maximum collector emitter saturation voltage is 2.5 V for efficient switching. Single element per chip with NPN polarity suitable for power amplification applications.
Measures 9.15 mm in height and 10.4 mm in length for compact PCB integration.
This transistor is ideal for industrial, consumer electronics, power supply regulation, and other electronic component manufacturing sectors requiring reliable power transistor solutions. Explore more semiconductor components and electronic devices within the EnvMart platform to meet diverse engineering needs.
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