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Nexperia Transistor PNP 3-Pin UMT Package 100 mA 65 V - Model BC856BW,115

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Nexperia Transistor PNP 3-Pin UMT Package 100 mA 65 V - Model BC856BW,115

Name: Nexperia Transistor PNP 3-Pin UMT Package 100 mA 65 V - Model BC856BW,115
Brand: Nexperia
SKU: 182035
Price: 0.04 USD
Availability: InStock

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Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin	Malaysia
Brand	Nexperia
Height	0.95mm
Length	2.2mm
Model	BC856BW,115
Width	1.35mm
Mount Type	Surface
Series	BC856
Maximum Operating Temperature	150°C
Package Type	UMT
Minimum Operating Temperature	-65°C
Standards/Approvals	RoHS
Pin Count	3
Maximum Collector Emitter Voltage Vceo	-65V
Minimum DC Current Gain hFE	220
Transistor Polarity	PNP
Maximum Emitter Base Voltage VEBO	5V
Maximum Collector Base Voltage VCBO	80V
Automotive Standard	AEC-Q101
Maximum Power Dissipation Pd	200mW
Maximum DC Collector Current Idc	-100mA
Transistor Configuration	Single
Maximum Transition Frequency ft	100MHz
Maximum DC Collector Current	100 mA
PNP transistor in a SOT323 plastic package. NPN complements	BC846W, BC847W and BC848W
onsemi SBC807-40WT1G Transistor, 500 mA PNP, 45 V, 3-Pin SOT-323Brand	onsemi

Key Features

Supports maximum DC collector current of 100 mA.
Maximum collector-emitter voltage is 65 volts, suitable for low voltage applications.
Compact surface mount package with 3 pins and ultra-small form factor.
Features high DC current gain with minimum hFE of 220.
Wide operating temperature range from -65°C to 150°C for reliable performance.
Maximum power dissipation is 200 mW, providing efficient thermal handling.
Design complies with RoHS standards, ensuring environmental safety.
Automotive standard compliant (AEC-Q101) for high reliability in demanding environments.

Product Description

Nexperia BC856BW,115 is a PNP bipolar transistor housed in a small 3-pin UMT plastic package suitable for space-saving circuit designs. It supports a maximum DC collector current of 100 mA and a collector-emitter voltage up to 65 V. This transistor is optimized for general purpose switching and amplification tasks in electronic, industrial, automotive, and communication applications.

The transistor operates efficiently within a wide temperature range from -65°C to 150°C, making it ideal for use in harsh environmental conditions. It delivers a minimum DC current gain (hFE) of 220 and can dissipate power up to 200 mW, ensuring stable and reliable operation under varying electrical loads.

Its compact surface mount UMT package has dimensions approximately 2.2 mm in length, 1.35 mm in width, and 0.95 mm in height, facilitating easy integration into densely packed printed circuit boards (PCBs). Compliance with RoHS and automotive AEC-Q101 standards emphasizes its suitability for automotive and other high reliability applications.

This transistor complements Nexperia's range including NPN counterparts BC846W, BC847W, and BC848W. It provides a widely adopted choice for switching and amplification in industrial, laboratory, HVAC, manufacturing, automotive electronics, and general electronic circuits.

Maximum DC collector current of 100 mA for low current applications. Maximum collector-emitter voltage of 65 V suitable for medium voltage control. Surface mount UMT package supports compact, high-density board designs. Minimum DC current gain hFE of 220 ensuring good amplification.

Operating temperature range from -65°C to 150°C for robustness. Maximum power dissipation of 200 mW supports small signal loads. Conforms to RoHS environmental standards. Automotive grade compliant (AEC-Q101) for demanding applications.

Manufactured in Malaysia under strict quality controls.

For industrial engineers, designers, and technicians seeking reliable PNP transistors for switching and amplification, the Nexperia BC856BW,115 offers consistent performance, compact size, and automotive-ready quality. Explore more electronic components and semiconductors on EnvMart for your next project development.

Explore more products in our Bipolar Transistors category.