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Nexperia Resistor-Equipped NPN Transistor, 100 mA, 50 V, 3-Pin DFN1110D-3 PDTC143ZQB-QZ

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Model PDTC143ZQB-QZ
Mount Type Surface
Series PDTC143Z
Maximum Operating Temperature 150°C
Package Type DFN1110D-3
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo 50V
Minimum DC Current Gain hFE 100
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 50V
Automotive Standard AEC-Q101
Maximum DC Collector Current Idc 100mA
Transistor Configuration NPN
Maximum Transition Frequency ft 230MHz

Key Features

  • This transistor incorporates built-in resistors, simplifying circuit designs.
  • It features an NPN configuration with a minimum DC current gain hFE of 100.
  • Compact surface-mount DFN1110D-3 package with low height of 0.5 mm.
  • Suitable for automatic optical inspection (AOI) due to side-wettable flanks.
  • Operates reliably across -55°C to 150°C temperature range.
  • Maximum transition frequency of 230 MHz supports high-speed switching.
  • Automotive-grade device compliant with AEC-Q101 standard and RoHS.

Product Description

Nexperia PDTC143ZQB-QZ is a resistor-equipped NPN transistor designed for surface-mount applications in a space-saving 3-pin DFN1110D-3 package. It supports a maximum DC collector current of 100 mA and collector emitter voltage of 50 V, making it suitable for controlling IC inputs and switching loads efficiently.

This ultra-small transistor integrates built-in resistors, which reduces component counts and simplifies circuit layouts. The plastic package features side-wettable flanks, enabling automated optical inspection to ensure solder joint quality in automated manufacturing environments.

Operating temperature range from -55°C to 150°C and an impressive maximum transition frequency of 230 MHz make this transistor ideal for digital applications and fast switching requirements. It is also compliant with the automotive AEC-Q101 standard, ensuring reliability in demanding automotive electronic systems.

Typical use cases include digital circuit switching, load control in embedded electronics, and cost-effective alternatives for BC857 series transistors. The device's low profile (0.5 mm height) facilitates compact PCB designs.

The PDTC143Z series combines ease of use with high performance in semiconductor discrete components, making it suitable for industrial, automotive, and consumer electronics manufacturing and repair.

This transistor includes built-in resistors, simplifying circuit design. The compact DFN1110D-3 package supports automated assembly processes. Offers reliable operation across a broad temperature range. Compliant with RoHS and automotive AEC-Q101 standards.

Enables reduction in component count and cost-saving in assemblies. Discover more Nexperia semiconductors and related products in the EnvMart electronics section for reliable industrial and commercial applications.

Explore more products in our Bipolar Transistors category.

Nexperia Resistor-Equipped NPN Transistor, 100 mA, 50 V, 3-Pin DFN1110D-3 PDTC143ZQB-QZ
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Frequently Asked Questions

The maximum DC collector current for this transistor is 100 mA.

It operates reliably across a temperature range of -55°C to 150°C.

The maximum collector-emitter voltage (Vceo) is 50 V.

The maximum transition frequency for this model is 230 MHz, supporting high-speed switching applications.

This transistor is housed in a compact 3-pin DFN1110D-3 package.

Yes, it is compliant with the automotive AEC-Q101 standard.

It features built-in resistors, which simplify circuit designs and reduce component count.

The minimum DC current gain (hFE) is 100.

Yes, the plastic package features side-wettable flanks, making it suitable for automated optical inspection (AOI).

The maximum emitter-base voltage (VEBO) is 5 V.

This model has an NPN configuration, meaning it is a negative-positive-negative transistor.

The country of origin for this transistor is India.

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