ROHM Insulated Gate Bipolar Transistor (IGBT) 50 A 650 V 3-Pin TO-247GE Through Hole RGTH00TS65DGC13

ROHM RGTH00TS65DGC13 Insulated Gate Bipolar Transistor (IGBT) is engineered for high speed switching in power electronics applications with a continuous collector current of 50 A and maximum voltage of 650 V.

This IGBT device features a TO-247GE package mounting type with three pins through hole configuration, optimized for easy PCB integration and high thermal dissipation.

Its low collector-emitter saturation voltage of 1.6 V contributes to minimized conduction losses, enhancing overall power efficiency in industrial, HVAC, motor control, and power supply systems.

Capable of operating under a wide temperature range from -40°C up to 175°C, the RGTH00TS65DGC13 supports reliable performance in demanding environments.

The device integrates advanced Field Stop Trench technology that ensures very fast switching speeds and low switching losses. Additionally, it contains a built-in very fast and soft recovery free-wheeling diode (FRD) to facilitate soft switching and reduce electromagnetic interference (EMI).

This product complies with RoHS standards, featuring lead-free plating suitable for environmentally conscious manufacturing. Capable of continuous collector current of 50 A. Maximum collector-emitter voltage of 650 V. Low collector-emitter saturation voltage of 1.6 V.

Through hole TO-247GE package with 3 pins. Operating temperature range from -40°C to 175°C. Maximum gate-emitter voltage ±30 V. Maximum power dissipation of 277 W. RoHS compliant with lead-free plating. Field Stop Trench technology for fast switching and low losses.

Built-in very fast and soft recovery free-wheeling diode.

This ROHM IGBT is ideal for use in industrial manufacturing equipment, motor drives, power inverters, and various electronic applications where efficient high current switching is critical.

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