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Nexperia Bipolar Transistor 2 A NPN 50 V TO-252 Surface Mount 3-Pin DPAK MJD2873-QJ
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Model | MJD2873-QJ |
| Mount Type | Surface |
| Series | MJD2873-Q |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 50V |
| Minimum DC Current Gain hFE | 120 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 6V |
| Automotive Standard | AEC-Q101 |
| Maximum DC Collector Current Idc | 2A |
| Transistor Configuration | NPN |
Key Features
- High thermal power dissipation ensures reliable performance.
- Low collector emitter saturation voltage promotes energy efficiency.
- Fast switching speeds optimize circuit response.
- Qualified to automotive AEC-Q101 standards.
- Operates reliably from -55°C to 150°C.
- Compact 3-pin DPAK package with surface mount design.
- Electrical characteristics align with the popular MJD2873 series.
- Compliant with RoHS environmental standards.
Product Description
Nexperia MJD2873-QJ bipolar transistor is a high power NPN transistor designed for high efficiency and thermal performance. It is housed in a TO-252 (SOT428C) DPAK surface mount package which offers excellent heat dissipation and compact footprint. This device supports a maximum DC collector current of 2 A and a maximum collector emitter voltage of 50 V, making it suitable for power switching applications.
Operating temperature ranges from -55°C to 150°C, ensuring performance in demanding industrial and automotive environments. The transistor features a minimum DC current gain of 120 and maximum emitter base voltage of 6 V, enabling reliable amplification and switching functions.
Its low collector emitter saturation voltage results in less power loss during switching, enhancing the energy efficiency of circuits. The fast switching speed characteristic is ideal for dynamic electronic systems requiring quick response times.
Qualified to AEC-Q101 automotive standards, this bipolar transistor meets the stringent reliability requirements for automotive applications. Its RoHS compliance confirms adherence to environmental and safety regulations.
Typical applications include automotive electronics, industrial power control, and other electronic switching circuits where a reliable, efficient bipolar transistor is required. The 3-pin configuration in a surface mount package facilitates easy integration into printed circuit boards.
High thermal power dissipation for reliable operation. Low saturation voltage improves efficiency. Fast switching speed suited for dynamic circuits. Qualified under automotive standard AEC-Q101. RoHS compliant for environmental safety.
Compact 3-pin TO-252 DPAK package. Explore the Nexperia MJD2873-QJ as part of Bipolar Transistor selections for advanced electronic and automotive designs at EnvMart.
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Frequently Asked Questions
The maximum collector emitter voltage (Vceo) for this model is 50 V.
The maximum DC collector current (Idc) for the MJD2873-QJ is 2 A.
This model operates reliably within a temperature range of -55°C to 150°C.
It is housed in a TO-252 (SOT428C) DPAK surface mount package.
The minimum DC current gain (hFE) for the MJD2873-QJ is 120.
Yes, it is compliant with RoHS environmental standards.
This model is qualified under the AEC-Q101 automotive standard.
The maximum emitter base voltage (VEBO) for this transistor is 6 V.
The transistor configuration for this model is NPN.
Typical applications include automotive electronics, industrial power control, and electronic switching circuits.
This model features a 3-pin configuration.
Key features include high thermal power dissipation, low collector emitter saturation voltage, and fast switching speeds.
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