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Nexperia Bipolar Transistor -6 A PNP -100 V 3-Pin DPAK MJD42C-QJ
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Model | MJD42C-QJ |
| Mount Type | Surface |
| Series | MJD42C-Q |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | -100V |
| Minimum DC Current Gain hFE | 30 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | 6V |
| Automotive Standard | AEC-Q101 |
| Maximum DC Collector Current Idc | -6A |
| Transistor Configuration | NPN |
Key Features
- The transistor is housed in a TO-252 surface mount plastic package for easy PCB integration.
- It has a minimum DC current gain (hFE) of 30 ensuring reliable amplification performance.
- The device operates within a temperature range from -55°C to 150°C for robustness in demanding environments.
- Fast switching speeds and low collector emitter saturation voltage ensure high efficiency in power management applications.
- Complies with RoHS and is qualified according to the AEC-Q101 automotive standard, suitable for automotive electronics.
- Features a 3-pin configuration suitable for surface mount assembly on modern circuit boards.
- Designed for high thermal power dissipation, reducing heat generation and increasing energy efficiency.
Product Description
Nexperia MJD42C-QJ Bipolar Transistor is a high power PNP transistor designed for use in advanced electronic circuits where high current and voltage ratings are required. This transistor provides a maximum DC collector current of -6 A and is capable of handling collector emitter voltages up to -100 V. It comes in a TO-252 (DPAK) 3-pin surface mount package, making it ideal for compact and efficient PCB layouts.
The transistor exhibits fast switching speeds and a low collector emitter saturation voltage, contributing to enhanced energy efficiency and minimal heat generation during operation. Its minimum DC current gain of 30 ensures stable amplification performance in various power applications.
Operating reliably across a wide temperature range from -55°C up to 150°C, the transistor is suitable for harsh industrial and automotive environments. It is RoHS compliant and qualified to the AEC-Q101 automotive standard, affirming its suitability for use in automotive electronic systems where reliability is critical.
The compact 3-pin TO-252 package supports surface mounting, enabling ease of integration with automated manufacturing processes. High thermal power dissipation capability allows this device to work efficiently under demanding workloads, making it suitable for power management, motor control, and switching applications in industrial, automotive, and consumer electronics sectors.
The transistor is housed in a TO-252 surface mount plastic package for easy PCB integration. Minimum DC current gain (hFE) of 30 ensures reliable amplification. Wide operating temperature range of -55°C to 150°C for durability.
Fast switching speeds and low saturation voltage improve efficiency. RoHS compliant and AEC-Q101 qualified for automotive use. 3-pin DPAK configuration supports advanced electronics designs. High thermal dissipation capability reduces heat generation.
This Nexperia Bipolar Transistor is ideal for industrial applications including power supply regulation, motor drivers, and automotive electronics where reliable switching and power handling are essential. EnvMart offers this transistor as part of its extensive semiconductor and electronic components catalog for engineering and manufacturing needs.
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Frequently Asked Questions
The maximum collector emitter voltage (Vceo) for the MJD42C-QJ is -100 V.
This model can handle a maximum DC collector current of -6 A.
The minimum DC current gain (hFE) of this transistor is 30.
It operates within a temperature range from -55°C to 150°C.
This transistor is housed in a TO-252 (DPAK) surface mount plastic package.
Yes, it is RoHS compliant and qualified according to the AEC-Q101 automotive standard.
The MJD42C-QJ features a 3-pin configuration suitable for surface mount assembly.
The maximum emitter base voltage (VEBO) for this transistor is 6 V.
This transistor is suitable for applications such as power supply regulation, motor drivers, and automotive electronics.
The transistor polarity of this model is PNP.
It is designed for high thermal power dissipation, which helps reduce heat generation during operation.
The MJD42C-QJ belongs to the MJD42C-Q series.
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