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Nexperia Bipolar Transistor PNP, Maximum DC Collector Current -500 mA, Maximum Collector Emitter Voltage -45 V BC807-40QBZ
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Model | BC807-40QBZ |
| Mount Type | Surface |
| Series | BC807QB-Q |
| Maximum Operating Temperature | 150°C |
| Package Type | DFN1110D-3 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | -45V |
| Minimum DC Current Gain hFE | 250 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | -5V |
| Maximum Collector Base Voltage VCBO | -50V |
| Automotive Standard | AEC-Q101 |
| Maximum DC Collector Current Idc | -500mA |
| Transistor Configuration | PNP |
Key Features
- Maximum DC collector current is -500 mA for reliable current handling.
- Maximum collector emitter voltage is -45 V ensuring robust voltage tolerance.
- Comes in a compact DFN1110D-3 package suitable for automated assembly.
- Transistor polarity is PNP with a minimum DC current gain of 250.
- Operational temperature ranges from -55°C to 150°C for various environments.
- Complies with RoHS and automotive standard AEC-Q101 certification for quality assurance.
- Has a low package height of 0.5 mm for space-saving circuit designs.
- High power dissipation capability with three current gain selections available.
Product Description
The Nexperia BC807-40QBZ is a bipolar PNP transistor packaged in an ultra-small 3-pin DFN1110D-3 surface-mounted device. This device features high power dissipation capability and a maximum DC collector current of -500 mA, making it suitable for applications requiring moderate current handling capacity.
With a maximum collector emitter voltage of -45 V and maximum collector base voltage of -50 V, the transistor can operate reliably in moderately high voltage environments. Its transistor polarity is PNP with a minimum DC current gain (hFE) of 250, offering stable amplification performance typical for signal and switching circuits.
The device supports a wide temperature range from -55°C to 150°C, meeting the stringent thermal conditions required in automotive and industrial applications. Its compliance with the RoHS directive ensures environmentally friendly manufacturing, while the AEC-Q101 qualification confirms suitability for automotive-grade electronics.
The compact DFN1110D-3 package has a low profile of 0.5 mm and side-wettable flanks for enhanced solder joint inspection via Automatic Optical Inspection (AOI). This package allows for a smaller PCB footprint compared to conventional leaded SMD packages, benefiting assembly density and board space optimization.
The transistor is well suited for use in automotive electronics, general purpose amplification circuits, and power management systems in consumer and industrial products. The three selectable current gain options provide design flexibility for varied application requirements.
Maximum DC collector current: -500 mA. Maximum collector emitter voltage: -45 V. Package type: 3-Pin DFN1110D-3 surface mount. Transistor polarity: PNP. Minimum current gain (hFE): 250. Operating temperature range: -55°C to 150°C.
Compliant with RoHS directive. Qualified to automotive standard AEC-Q101. Compact low-profile package with AOI optimized design.
Choose Nexperia BC807-40QBZ for efficient and reliable transistor solutions in automotive, industrial, and consumer electronics applications. Explore more semiconductor products at EnvMart.
Explore more products in our Bipolar Transistor category.
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Frequently Asked Questions
The maximum DC collector current of the BC807-40QBZ is -500 mA, allowing for reliable current handling in various applications.
This model has a maximum collector emitter voltage of -45 V, ensuring robust voltage tolerance during operation.
The BC807-40QBZ comes in a compact 3-pin DFN1110D-3 surface-mounted package, which is suitable for automated assembly.
The operational temperature range for this transistor is from -55°C to 150°C, making it suitable for various environmental conditions.
The minimum DC current gain (hFE) for this PNP transistor is 250, providing stable amplification performance.
This transistor complies with the AEC-Q101 automotive standard, confirming its suitability for automotive-grade electronics.
The maximum collector base voltage is -50 V and the maximum emitter base voltage is -5 V for this model.
The RoHS compliance indicates that this product meets environmental standards by restricting hazardous substances in its manufacturing.
The DFN1110D-3 package has a low profile of 0.5 mm, allowing for space-saving designs and enhanced assembly density on PCBs.
This transistor is suitable for automotive electronics, general purpose amplification circuits, and power management systems in consumer and industrial products.
The BC807-40QBZ has a pin count of 3, which is typical for its compact package design.
This transistor belongs to the BC807QB-Q series, which includes various models designed for similar applications.
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