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ROHM N-Channel MOSFET 400 mA 60 V Enhancement 3-Pin SOT-23 BSS138BKAHZGT116
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Height | 1.1mm |
| Length | 3mm |
| Model | BSS138BKAHZGT116 |
| Width | 1.4mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 400mA |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 680mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 350mW |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Offers maximum continuous drain current of 400 mA for reliable switching.
- Maximum drain-source voltage of 60 V supports medium voltage applications.
- Surface mount SOT-23 package with three pins for easy PCB integration.
- Low on-resistance with maximum drain-source resistance of 680 mΩ improves efficiency.
- Capable of operating from -55°C up to 150°C for harsh environments.
- Maximum gate-source voltage rating of 20 V ensures robust control.
- Forward voltage of 1.2 V suitable for low voltage operation.
- Complies with automotive standard AEC-Q101 for high reliability.
Product Description
ROHM BSS138BKAHZGT116 is an N-Channel enhancement mode MOSFET designed for efficient switching and load management in electronic circuits. Rated at a maximum continuous drain current of 400 mA and a drain-source voltage of 60 V, this 3-pin device is housed in a compact SOT-23 surface mount package measuring 3 mm in length, 1.4 mm in width, and 1.1 mm in height. The device features a low on-resistance of 680 mΩ, optimizing power efficiency and minimizing thermal output.
The transistor supports a wide operating temperature range from -55°C up to 150°C, making it suitable for automotive and industrial applications requiring high reliability. It complies with AEC-Q101 automotive standards and integrates an ESD protection diode within its SST3 package, enhancing robustness against electrical surges.
This MOSFET is ideal for switching circuits, high-side load switches, relay drivers, and other automotive-grade electronic systems. Its maximum gate-source voltage of 20 V and forward voltage of 1.2 V supports stable operation and ease of control in various circuit designs.
High-reliability automotive-grade component with AEC-Q101 qualification. Compact SOT-23 surface mount package suits PCB space constraints. Wide operating temperature range ensures durability in harsh environments. Low on-resistance optimizes power consumption and limits heat generation.
Integrated ESD protection diode enhances device reliability. Robust gate voltage ratings enable stable switching control. Ideal for use in automotive electronics, industrial equipment, and consumer devices.
ROHM products offer high performance and reliability for demanding semiconductor applications. Explore EnvMart’s extensive semiconductor catalog to find compatible MOSFETs and electronic components tailored for industrial, automotive, and communication systems.
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Frequently Asked Questions
The maximum continuous drain current of this model is 400 mA, making it suitable for reliable switching applications.
It has a maximum drain-source voltage rating of 60 V, which supports medium voltage applications.
The SOT-23 package measures 3 mm in length, 1.4 mm in width, and 1.1 mm in height, allowing for easy PCB integration.
This model operates within a temperature range of -55°C to 150°C, making it suitable for harsh environments.
The maximum gate-source voltage rating is 20 V, ensuring robust control in circuit applications.
It has a forward voltage of 1.2 V, which is suitable for low voltage operation.
The maximum drain-source resistance is 680 mΩ, which helps improve efficiency in power management.
It complies with the AEC-Q101 automotive standard, ensuring high reliability for automotive applications.
This model features an N-channel configuration, which is typical for enhancement mode MOSFETs.
It has a pin count of 3, which is standard for SOT-23 package devices.
The maximum power dissipation for this MOSFET is rated at 350 mW, allowing it to handle significant power levels.
It is ideal for switching circuits, high-side load switches, and relay drivers in automotive-grade electronic systems.
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