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Nexperia Small Signal PNP Transistor BCW30,215, -100 mA, -32 V, 3-Pin SOT-23, Surface Mount, AEC-Q101 BCW30,215

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin China
Brand Nexperia
Height 1mm
Length 2.9mm
Model BCW30,215
Width 1.3mm
Mount Type Surface
Series BCW30
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -65°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo -32V
Minimum DC Current Gain hFE 90
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 32V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 250mW
Maximum DC Collector Current Idc -100mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz
onsemi BCW30LT1G Digital Transistor, -32 V PNP Surface SOT-23, 3-PinBrand onsemi

Key Features

  • Maximum DC collector current of 100 mA for low power applications.
  • Collector emitter voltage rating of 32 V ensuring reliable operation.
  • Surface mount SOT-23 package with 3 pins for compact PCB designs.
  • High transition frequency of 100 MHz suitable for switching use.
  • Meets automotive standard AEC-Q101 for robust reliability.
  • Wide operating temperature range from -65°C to 150°C.
  • Maximum power dissipation of 250 mW to handle moderate loads.
  • Minimum DC current gain (hFE) of 90 enabling efficient amplification.

Product Description

Nexperia BCW30,215 is a high-quality small signal PNP transistor designed for surface mount applications using a 3-pin SOT-23 package. Featuring a maximum DC collector current of 100 mA and collector emitter voltage rating of 32 V, it supports reliable performance in a variety of low power amplification and switching circuits.

This single configuration transistor offers a high transition frequency of 100 MHz, making it suitable for medium-speed switching tasks in automotive and industrial electronics. The device is compliant with automotive standard AEC-Q101, ensuring durability and robustness in demanding environments.

With a power dissipation capability of up to 250 mW and a minimum DC current gain of 90, the BCW30,215 transistor provides efficient amplification with stable operation over a wide temperature range from -65°C to +150°C.

The transistor's compact physical dimensions of 2.9 mm length, 1.3 mm width, and 1 mm height allow easy integration on compact PCB layouts. It is RoHS compliant and manufactured in China, meeting environmental and quality standards.

Maximum collector current: 100 mA. Collector emitter voltage: 32 V. Surface mount SOT-23 package. High transition frequency of 100 MHz. Automotive AEC-Q101 qualified. Wide operating temperature from -65°C to 150°C. Moderate power dissipation of 250 mW.

Minimum current gain of 90.

This transistor is suitable for automotive, industrial electronics, telecommunications, and general purpose amplification or switching tasks. It can be used in power management systems, signal amplification circuits, and electronic control units that require reliable PNP bipolar transistors.

Explore the comprehensive range of Bipolar Transistors by Nexperia in the Electronics & Electricals category on EnvMart for high-quality semiconductor components.

Nexperia Small Signal PNP Transistor BCW30,215, -100 mA, -32 V, 3-Pin SOT-23, Surface Mount, AEC-Q101 BCW30,215
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Frequently Asked Questions

The maximum DC collector current for this model is -100 mA, suitable for low power applications.

The collector emitter voltage rating is -32 V, ensuring reliable operation in various circuits.

It uses a surface mount SOT-23 package with 3 pins, allowing for compact PCB designs.

The maximum transition frequency is 100 MHz, making it suitable for medium-speed switching tasks.

Yes, it meets the automotive standard AEC-Q101, ensuring durability and robustness in demanding environments.

The operating temperature range is from -65°C to 150°C, allowing for stable performance in extreme conditions.

The maximum power dissipation is 250 mW, which enables it to handle moderate loads effectively.

The minimum DC current gain (hFE) is 90, which facilitates efficient amplification.

The dimensions are 2.9 mm in length, 1.3 mm in width, and 1 mm in height, suitable for compact designs.

It is a PNP bipolar transistor, designed for various amplification and switching tasks.

The maximum collector base voltage (VCBO) is 32 V, and the maximum emitter base voltage (VEBO) is 5 V.

This model is manufactured in China, adhering to RoHS standards for environmental compliance.

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