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Nexperia Dual NPN + PNP Transistor 100 mA, 45 V, 6-Pin SOT-666 Surface Mount BC847BVN,115

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin Hong Kong
Brand Nexperia
Height 0.55mm
Length 1.7mm
Model BC847BVN,115
Width 1.7mm
Mount Type Surface
Series BC847BVN
Maximum Operating Temperature 150°C
Package Type SOT-666
Minimum Operating Temperature -65°C
Standards/Approvals RoHS
Pin Count 6
Maximum Collector Emitter Voltage Vceo 45V
Minimum DC Current Gain hFE 200
Transistor Polarity NPN + PNP
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 50V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 200mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Isolated
Maximum Transition Frequency ft 100MHz

Key Features

  • Dual isolated NPN and PNP transistor configuration provides versatile switching applications.
  • Maximum collector current of 100 mA suitable for low power circuits.
  • 45 V maximum collector emitter voltage ensures robust operation in typical low voltage applications.
  • Compact 6-pin SOT-666 surface mount package for PCB space efficiency.
  • Guaranteed minimum DC current gain (hFE) of 200 for reliable amplification.
  • Maximum power dissipation of 200 mW ensures stable performance under moderate load.
  • Thermal operating range from -65°C to 150°C supports demanding industrial environments.
  • Automotive grade AEC-Q101 standard compliant ensuring high reliability.

Product Description

Nexperia BC847BVN,115 dual NPN and PNP transistor is designed for versatile use in electronic circuits requiring low current switching and amplification. It supports a maximum DC collector current of 100 mA and a collector emitter voltage rating of 45 V, making it suitable for a wide range of low voltage power applications in industrial, automotive, and consumer electronic devices.

This transistor set is housed in a compact 6-pin SOT-666 surface mount package measuring 1.7 mm by 1.7 mm with a height of 0.55 mm, allowing for high-density PCB layouts. The transistor offers a minimum DC current gain (hFE) of 200, which ensures efficient signal amplification while dissipating a maximum power of 200 mW. Its isolated transistor configuration enables separate NPN and PNP operation within the same device.

The BC847BVN,115 series complies with the automotive standard AEC-Q101, guaranteeing suitability for automotive applications, and is RoHS compliant for environmental safety. It operates reliably within a temperature range from -65°C up to 150°C, supporting industrial and harsh environment applications.

This dual transistor is ideal for switching, amplification, and signal processing tasks used in industrial control systems, automotive electronics, instrumentation, and consumer electronics.

Dual isolated NPN and PNP transistors in a single device. 100 mA maximum collector current rating. 45 V collector emitter voltage maximum. SOT-666 six-pin surface mount package. Minimum DC current gain of 200 for amplification.

Power dissipation of 200 mW for stable operation. Operating temperature from -65°C to 150°C. Automotive AEC-Q101 compliant. Compact dimensions 1.7 mm × 1.7 mm × 0.55 mm.

This transistor set is a reliable choice for electronic design engineers requiring dependable Bipolar Transistors for switching and amplification in compact PCB footprints. Explore more semiconductor components within the Nexperia series at EnvMart for your industrial and automotive needs.

Nexperia Dual NPN + PNP Transistor 100 mA, 45 V, 6-Pin SOT-666 Surface Mount BC847BVN,115
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Frequently Asked Questions

The maximum collector current for this model is 100 mA, making it suitable for low power circuits.

It has a maximum collector-emitter voltage rating of 45 V, ensuring robust operation in typical low voltage applications.

This model is housed in a compact 6-pin SOT-666 surface mount package, which measures 1.7 mm by 1.7 mm with a height of 0.55 mm.

The minimum DC current gain (hFE) for this transistor is guaranteed to be 200, which supports reliable amplification.

It can dissipate a maximum power of 200 mW, ensuring stable performance under moderate load conditions.

The operating temperature range for this model is from -65°C to 150°C, allowing it to function in demanding industrial environments.

Yes, it complies with the automotive standard AEC-Q101, ensuring high reliability for automotive applications.

This model contains a dual isolated configuration of NPN and PNP transistors, allowing for versatile switching applications.

The SOT-666 package dimensions are 1.7 mm in length and width, and 0.55 mm in height.

The maximum emitter-base voltage (VEBO) for this model is 5 V.

The maximum collector-base voltage (VCBO) rating for this transistor is 50 V.

The maximum transition frequency (ft) for this model is 100 MHz, suitable for high-frequency applications.

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