Nexperia Low Saturation Voltage NPN Bipolar Transistor 1A 60V 6-Pin TSOP PBSS4160DS,115

Nexperia PBSS4160DS,115 is a low saturation voltage NPN bipolar junction transistor designed for switching and digital applications requiring high efficiency and compact form factor.

This transistor supports a maximum DC collector current of 1 ampere and a maximum collector-emitter voltage of 60 volts, housed in a surface mount 6-pin TSOP package measuring 2.9 mm in length, 1.5 mm in width, and 1.0 mm in height.

It provides a minimum DC current gain of 100 and maximum power dissipation of 700 mW, enabling stable operation with low heat generation. The transistor is configured as isolated and supports a maximum collector base voltage of 80 volts and emitter base voltage of 5 volts.

Its transition frequency reaches up to 220 MHz, making it suitable for high-frequency switching operations. The device is rated for operation over a wide temperature range from -65°C to +150°C, ensuring robust performance in diverse environments.

The series PBSS4160DS meets the AEC-Q101 automotive standard, making it reliable for automotive electronics systems. Manufactured in Malaysia, this transistor is ideal for industrial, automotive, and electronic circuit applications requiring low saturation losses and high efficiency.

Supports 1 A collector current and 60 V collector-emitter voltage. Compact 6-pin TSOP surface mount package. Minimum current gain of 100 supports efficient amplification. Wide operating temperature range ensures reliability.

Maximum power dissipation of 700 mW to minimize heat generation. Automotive standard AEC-Q101 compliance guarantees quality standards. Isolated transistor configuration reduces noise interference. Maximum transition frequency of 220 MHz allows high-speed switching.

Compact dimensions for space-saving PCB designs.

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