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Nexperia Dual Low Saturation Voltage NPN + PNP Bipolar Transistor 60 V 1 A 6-Pin TSOP PBSS4160DPN,115

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin Malaysia
Brand Nexperia
Height 1mm
Length 2.9mm
Model PBSS4160DPN,115
Width 1.5mm
Mount Type Surface
Series PBSS4160DPN
Maximum Operating Temperature 150°C
Package Type TSOP
Minimum Operating Temperature -65°C
Pin Count 6
Maximum Collector Emitter Voltage Vceo 60V
Minimum DC Current Gain hFE 100
Transistor Polarity NPN + PNP
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 80V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 700mW
Maximum DC Collector Current Idc 1A
Transistor Configuration Isolated
Maximum Transition Frequency ft 220MHz

Key Features

  • Features low collector-emitter saturation voltage for high efficiency.
  • Contains both NPN and PNP transistors in one device.
  • Maximum DC collector current of 1 ampere.
  • Operates within temperature range from -65°C to 150°C.
  • Maximum power dissipation of 700 milliwatts.
  • High transition frequency of 220 MHz suitable for switching applications.
  • Isolated transistor configuration with surface mount TSOP package.
  • Compliance with automotive standard AEC-Q101 ensures reliability.

Product Description

Nexperia PBSS4160DPN,115 Dual Low Saturation Voltage Bipolar Transistor combines both NPN and PNP transistor types in a compact 6-pin TSOP surface-mount package. It supports a maximum collector current of 1 ampere and can handle collector-emitter voltages up to 60 volts, making it suitable for various switching and digital circuit applications.

Designed with low saturation voltages, these transistors reduce power losses and heat generation, enhancing overall circuit efficiency. The device operates reliably in a wide temperature range from -65°C to 150°C and complies with the automotive AEC-Q101 standard, ensuring robustness in demanding environments.

The transistor configuration is isolated and the compact dimensions (length 2.9 mm, width 1.5 mm, height 1 mm) allow for high-density PCB designs. This device achieves a high transition frequency of 220 MHz, suitable for high-speed switching circuits.

The maximum power dissipation rating is 700 milliwatts, providing stable operation within its limits. The transistor is packaged in a 6-pin Thin Small Outline Package (TSOP), optimized for surface mounting on printed circuit boards for industrial, automotive, and consumer electronics applications.

Manufactured in Malaysia, the PBSS4160DPN,115 model from Nexperia stands as a reliable component choice for low voltage, low power switching applications requiring both NPN and PNP transistors in a dual package.

Features low collector-emitter saturation voltage for high efficiency. Contains both NPN and PNP transistors in one device. Maximum DC collector current of 1 ampere. Operates within temperature range from -65°C to 150°C.

Maximum power dissipation of 700 milliwatts. High transition frequency of 220 MHz suitable for switching applications. Isolated transistor configuration with surface mount TSOP package. Compliance with automotive standard AEC-Q101 ensures reliability.

Compact dimensions: 2.9 mm length, 1.5 mm width, and 1 mm height. Manufactured in Malaysia for quality assurance. Explore more Bipolar Transistors and related semiconductor products at EnvMart for your electronic design and manufacturing needs.

Nexperia Dual Low Saturation Voltage NPN + PNP Bipolar Transistor 60 V 1 A 6-Pin TSOP PBSS4160DPN,115
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Frequently Asked Questions

The maximum DC collector current for the PBSS4160DPN,115 is 1 ampere.

It operates within a temperature range from -65°C to 150°C.

The maximum collector-emitter voltage (Vceo) is 60 volts.

The maximum transition frequency is 220 MHz, suitable for high-speed switching applications.

This transistor is packaged in a 6-pin Thin Small Outline Package (TSOP) optimized for surface mounting.

The maximum power dissipation rating is 700 milliwatts.

The dimensions are 2.9 mm in length, 1.5 mm in width, and 1 mm in height.

It complies with the automotive standard AEC-Q101, ensuring reliability in automotive applications.

The maximum emitter-base voltage (VEBO) is 5 volts.

The minimum DC current gain (hFE) is 100.

This model is manufactured in Malaysia.

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