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Nexperia Low Saturation Voltage NPN Transistor 1 A, 60 V, 6-Pin TSOP PBSS4160DS,115

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin Malaysia
Brand Nexperia
Height 1mm
Length 2.9mm
Model PBSS4160DS,115
Width 1.5mm
Mount Type Surface
Series PBSS4160DS
Maximum Operating Temperature 150°C
Package Type TSOP
Minimum Operating Temperature -65°C
Pin Count 6
Maximum Collector Emitter Voltage Vceo 60V
Minimum DC Current Gain hFE 100
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 80V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 700mW
Maximum DC Collector Current Idc 1A
Transistor Configuration Isolated
Maximum Transition Frequency ft 220MHz

Key Features

  • Designed with a 6-pin TSOP surface mount package for compact space-saving applications.
  • Offers high current capacity and low collector-emitter saturation voltage for efficient switching.
  • Maximum power dissipation is 700 mW, supporting reliable operation up to 150°C.
  • Features a minimum DC current gain (hFE) of 100 and a high transition frequency of 220 MHz.
  • Complies with the automotive AEC-Q101 standard for quality and reliability.
  • Operates within a temperature range of -65°C to 150°C, suitable for automotive and industrial environments.
  • Isolated transistor configuration ensuring reduced interference and enhanced performance.
  • Compact dimensions of 2.9 mm length, 1.5 mm width, and 1 mm height support miniaturized circuit designs.

Product Description

Nexperia PBSS4160DS,115 is a low saturation voltage NPN bipolar transistor designed for efficient switching and amplification in electronic circuits. This transistor features a robust 6-pin TSOP surface mount package, optimized for space-saving applications while delivering high performance.

With a maximum DC collector current of 1 A and a maximum collector-emitter voltage rating of 60 V, it supports a wide range of automotive and industrial uses. The transistor also offers a high transition frequency of 220 MHz, enabling reliable operation in high-speed switching circuits.

The device has a maximum power dissipation of 700 mW and operates reliably within a temperature range from -65°C to 150°C, making it suitable for demanding environments. Its minimum DC current gain of 100 ensures effective amplification.

The isolated transistor configuration and AEC-Q101 automotive standard certification underscore its suitability for automotive electronics and other industrial applications requiring strict quality standards. The compact dimensions (2.9 mm length, 1.5 mm width, and 1 mm height) facilitate integration into densely packed circuit boards.

Designed for low saturation voltage with high efficiency. Reliable operation across automotive temperature ranges. Ideal for switching and digital electronic applications. Compact TSOP package supports miniaturized circuit designs.

Compliant with automotive AEC-Q101 standards. High transition frequency for fast switching performance. Isolated configuration reduces electrical interference. Manufactured in Malaysia with high quality controls.

This transistor is suitable for industrial manufacturing, automotive electronics, high-frequency switching circuits, and general electronic component applications. Explore the wide range of Nexperia Bipolar Transistors available at EnvMart for reliable and efficient electronic design solutions.

Nexperia Low Saturation Voltage NPN Transistor 1 A, 60 V, 6-Pin TSOP PBSS4160DS,115
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Frequently Asked Questions

The maximum collector-emitter voltage (Vceo) for this transistor is 60 V.

This model can handle a maximum DC collector current of 1 A.

The maximum power dissipation for the PBSS4160DS,115 is 700 mW.

It operates reliably within a temperature range of -65°C to 150°C.

The minimum DC current gain (hFE) for this model is 100.

The transition frequency for this model is 220 MHz.

This transistor comes in a 6-pin TSOP surface mount package.

It complies with the AEC-Q101 automotive standard for quality and reliability.

The configuration of this transistor is isolated, which helps reduce electrical interference.

The dimensions of this model are 2.9 mm in length, 1.5 mm in width, and 1 mm in height.

The maximum emitter-base voltage (VEBO) for this transistor is 5 V.

This transistor is suitable for automotive electronics, high-frequency switching circuits, and general electronic component applications.

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