onsemi Digital Transistor Surface Mount SOIC Package 8-Pin 2W Power Dissipation FDS8958A

The onsemi FDS8958A is a Digital Transistor featuring dual N- and P-Channel enhancement mode power MOSFETs in an 8-pin SOIC surface mount package suitable for a wide range of electronic applications.

This device supports a maximum power dissipation of 2 watts and is designed for efficient switching with low on-state resistance, making it suitable for low voltage and battery-powered devices.

The N-Channel transistor achieves a current rating of 7.0 amps at 30 volts with an on-resistance of 28 milliohms at a gate-to-source voltage of 10 volts, while the P-Channel transistor provides -5 amps at -30 volts with an on-resistance of 52 milliohms at -10 volts gate-to-source voltage.

The component’s maximum operating temperature is 150°C, supporting robust performance under elevated thermal conditions. Compact dimensions (4.9 mm length, 3.9 mm width, and 1.58 mm height) facilitate integration into densely packed circuit boards using surface mount technology (SMT).

Manufactured with onsemi’s Advanced PowerTrench process, this transistor balances low power loss with superior switching speed, ideal for power management in automotive, industrial, and consumer electronics.

This dual N- and P-Channel transistor design offers flexible usage in complementary circuit topologies. The SOIC surface mount package allows efficient PCB space utilization and automated assembly. Low RDS(ON) values reduce conduction losses in switching applications.

High maximum temperature rating ensures reliability in harsh environments. Applications include power switching, battery management, and signal processing. The product is RoHS compliant, meeting environmental standards. Made in China.

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