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STMicroelectronics NPN Bipolar Power Transistor , 25 A DC Collector Current, 100 V Collector-Emitter Voltage, TO-247 TIP35C
Specifications
| Country of Origin | Planar technology with base island layout |
|---|---|
| Brand | STMicroelectronics |
| Height | 34.95mm |
| Length | 15.75mm |
| Model | TIP35C |
| Width | 5.15mm |
| Mount Type | Through Hole |
| Series | TIP35C |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 100V |
| Minimum DC Current Gain hFE | 10 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 100V |
| Maximum Power Dissipation Pd | 125W |
| Maximum DC Collector Current Idc | 25A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 3MHz |
Key Features
- Supports a maximum DC collector current of 25 A.
- Maximum collector-emitter voltage rated at 100 V.
- Packaged in a TO-247 through-hole mount type.
- Single transistor configuration with 3 pins.
- Maximum power dissipation capacity of 125 Watts.
- Low collector-emitter saturation voltage for efficient switching.
- Minimum DC current gain (hFE) of 10.
- Maximum operating temperature up to 150°C.
Product Description
STMicroelectronics presents the TIP35C, an NPN bipolar power transistor that delivers a maximum DC collector current of 25 A and a collector-emitter voltage rating of 100 V. This transistor is housed in a robust TO-247 package with through-hole mounting, providing excellent thermal and electrical performance for power amplification and switching purposes.
Manufactured using planar technology with base island layout, the TIP35C exhibits high gain performance and low saturation voltage, making it suitable for applications such as audio amplifiers, switching regulators, power converters, and various power amplifier circuits in industrial, commercial, and laboratory environments.
The device features a single transistor configuration with three pins, including maximum power dissipation of 125 W and an operating temperature range up to 150°C. Its physical dimensions - width 5.15 mm, height 34.95 mm, and length 15.75 mm - allow for easy integration into printed circuit boards and power modules.
This transistor is part of the complementary TIP35C / TIP36C series, designed to provide reliable, general-purpose power switching and amplification in electronic systems requiring high collector currents and voltages.
Supports a maximum DC collector current of 25 A. Rated at 100 V maximum collector-emitter voltage. Packaged in TO-247 with through-hole mount. Low collector-emitter saturation voltage for improved efficiency. Suitable for audio amplifier and switching regulator applications.
Maximum power dissipation of 125 W for high-power circuits. Operating temperature up to 150°C for demanding environments. Minimum DC current gain of 10.
Choose this STMicroelectronics TIP35C power transistor for applications requiring robust and efficient power amplification and switching components. Shop accordingly within the EnvMart Electronics & Electricals Semiconductor category for industrial and commercial Bipolar Transistors.
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Frequently Asked Questions
The TIP35C supports a maximum DC collector current of 25 A.
This model has a maximum collector-emitter voltage rating of 100 V.
The maximum power dissipation capacity of the TIP35C is 125 Watts.
It can operate at temperatures up to 150°C.
The TIP35C is packaged in a TO-247 through-hole mount type.
The minimum DC current gain (hFE) for the TIP35C is 10.
This model features a single transistor configuration with 3 pins.
The dimensions are 5.15 mm in width, 34.95 mm in height, and 15.75 mm in length.
It is suitable for applications such as audio amplifiers, switching regulators, and power converters.
The TIP35C is an NPN bipolar transistor.
The maximum transition frequency (ft) for the TIP35C is 3 MHz.
It is manufactured using planar technology with a base island layout.
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