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Nexperia Small Signal NPN Transistor BC848B,215, 100 mA, 30 V, 3-Pin SOT-23 BC848B,215

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin China
Brand Nexperia
Height 1.1mm
Length 3mm
Model BC848B,215
Width 2.5mm
Mount Type Surface
Series BC848
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 30V
Minimum DC Current Gain hFE 200
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 30V
Maximum Power Dissipation Pd 250mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Single
onsemi BC848BLT1G Transistor, 100 mA NPN, 30 V, 3-Pin SOT-23Brand onsemi

Key Features

  • Supports maximum DC collector current of 100 mA for low to moderate power applications.
  • Maximum collector-emitter voltage rating of 30 V ensures suitability for general-purpose signal amplification.
  • Compact surface mount SOT-23 package with 3 pins facilitates easy PCB mounting.
  • Features a single transistor configuration with an NPN polarity.
  • Operates safely between -65°C to 150°C operating temperature range.
  • Minimum DC current gain (hFE) of 200 ensures efficient signal gain.
  • Maximum power dissipation rating of 250 mW supports small signal operation.
  • Pin count of 3 and package dimensions of 3 mm by 2.5 mm by 1.1 mm.

Product Description

Nexperia BC848B,215 is a small signal NPN bipolar transistor designed for electronic and electrical applications requiring low power amplification. This transistor features a maximum DC collector current of 100 mA and a maximum collector-emitter voltage rating of 30 V, making it ideal for general purpose electronic circuits.

The device is housed in a SOT-23 surface mount package with a compact 3-pin footprint, measuring 3 mm in length, 2.5 mm in width, and 1.1 mm in height, facilitating efficient PCB layouts in modern electronics. It has a single transistor configuration and an NPN polarity, suitable for signal switching and amplification tasks.

Operational temperature ranges from -65°C to 150°C, enabling reliable performance under diverse environmental conditions. The transistor offers a minimum DC current gain (hFE) of 200, ensuring effective signal amplification with a maximum power dissipation of 250 mW suitable for small signal circuits.

Key features include a maximum collector base voltage of 30 V, a maximum emitter base voltage of 5 V, and three pins for connectivity. Manufactured in China, this high-quality bipolar transistor series BC848 supports diverse applications in industrial, consumer electronics, and electronic component manufacturing industries.

Supports maximum collector current of 100 mA for efficient switching. Compact 3-pin SOT-23 package for surface mount technology applications. Wide operating temperature range from -65°C to 150°C. Minimum current gain (hFE) of 200 for suitable signal amplification.

Low power dissipation of 250 mW enables small signal processing. High collector-emitter voltage durability up to 30 V. Single NPN transistor configuration suitable for general electronic use. Compact dimensions ideal for modern PCB layouts.

Reliable manufacturing standards with country of origin: China.

This Nexperia BC848B,215 transistor is widely used in industrial electronics, instrumentation, semiconductor design, and manufacturing sectors. For more precise electronic components and related semiconductors, browse the extensive EnvMart catalog for Bipolar Transistors and discrete semiconductors.

Nexperia Small Signal NPN Transistor BC848B,215, 100 mA, 30 V, 3-Pin SOT-23 BC848B,215
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Frequently Asked Questions

The maximum DC collector current of this transistor is 100 mA, suitable for low to moderate power applications.

It has a maximum collector-emitter voltage rating of 30 V, making it appropriate for general-purpose signal amplification.

This model is housed in a compact SOT-23 surface mount package with a 3-pin configuration.

The operating temperature range for this transistor is from -65°C to 150°C, allowing for reliable performance in various environments.

The minimum DC current gain (hFE) is 200, which ensures effective signal amplification.

The dimensions are 3 mm in length, 2.5 mm in width, and 1.1 mm in height.

The maximum power dissipation rating is 250 mW, which is suitable for small signal operation.

It features a single transistor configuration with NPN polarity, making it suitable for signal switching and amplification tasks.

The maximum emitter-base voltage (VEBO) is 5 V, ensuring compatibility with various circuit designs.

This transistor is widely used in industrial electronics, instrumentation, and semiconductor design and manufacturing sectors.

It is manufactured in China, adhering to reliable manufacturing standards.

The maximum collector-base voltage (VCBO) is 30 V, which supports its use in various electronic circuits.

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