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ROHM N-Channel Enhancement MOSFET 250 mA 60 V Surface Mount 3-Pin SOT-416 RE1L002SNTL

Category MOSFET Brand ROHM Condition New

Specifications

Country of Origin India
Brand ROHM
Height 0.8mm
Length 1.7mm
Model RE1L002SNTL
Width 0.96mm
Mount Type Surface
Series RE1C002ZP
Maximum Operating Temperature 150°C
Package Type SOT-416
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 250mA
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 12Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 150mW
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.2V

Key Features

  • Maximum continuous drain current of 250 mA enables efficient low power switching.
  • Supports a maximum drain-source voltage of 60 V for robust operation.
  • Low maximum drain-source resistance of 12 Ω reduces power loss.
  • Handles power dissipation up to 150 mW ensuring reliable performance.
  • Operating temperature range from -55°C to 150°C suitable for harsh environments.
  • Maximum gate-source voltage rating of 20 V safeguards device integrity.
  • Compact dimensions with length 1.7 mm, width 0.96 mm, and height 0.8 mm enable tight PCB layouts.
  • Forward voltage of 1.2 V typical for low voltage drop operation.

Product Description

The ROHM RE1L002SNTL is a high-quality N-Channel Enhancement MOSFET, optimized for low-voltage, surface-mounted applications requiring compact size and efficient switching. Its 3-pin SOT-416 package supports a maximum continuous drain current of 250 mA while sustaining a maximum drain-source voltage of 60 V, making it suitable for low power electronic circuits.

This MOSFET features a low maximum drain-source resistance of 12 Ω which minimizes conduction losses, and supports a maximum power dissipation of 150 mW to maintain stable transistor operation within its thermal limits. The device’s temperature capability ranges from -55°C up to 150°C, ensuring safe use in both extreme cold and high-temperature industrial environments.

The RE1L002SNTL offers a maximum gate-source voltage of 20 V, protecting the transistor gate during switching transients. Its physical dimensions of 1.7 mm length, 0.96 mm width, and 0.8 mm height allow engineers to implement compact PCB designs in modern electronics manufacturing.

This MOSFET is Pb Free and RoHS compliant, meeting current environmental standards. It is ideally suited for industrial electronics, power management circuits, automotive electronics (non-automotive standard), instrumentation, and general purpose switching applications within electronics and electrical component manufacturing.

Maximum continuous drain current of 250 mA provides efficient electrical control. Supports up to 60 V drain-source voltage for flexible system design. Low drain-source resistance of 12 Ω minimizes energy losses. Stable operation up to 150 mW power dissipation prevents overheating.

Wide operating temperature range from -55°C to 150°C. Gate withstand voltage rating at 20 V ensures device safety. Compact SOT-416 package dimensions suit miniaturized electronics. RoHS compliant ensuring regulatory compliance and environmental safety.

This product is an essential component in semiconductor electronics, enabling designers to build efficient power switching and amplification stages in industrial, laboratory, manufacturing, and commercial electronics sectors. It is a reliable choice for semiconductor device selection requiring minimal footprint with moderate current and voltage handling.

Explore more semiconductor and MOSFET options with ROHM and related brands at EnvMart to fulfill your electronics component needs.

ROHM N-Channel Enhancement MOSFET 250 mA 60 V Surface Mount 3-Pin SOT-416 RE1L002SNTL
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Frequently Asked Questions

The maximum continuous drain current for this model is 250 mA, enabling efficient low power switching applications.

It supports a maximum drain-source voltage of 60 V, making it suitable for various low power electronic circuits.

This MOSFET can handle a maximum power dissipation of 150 mW, ensuring reliable performance during operation.

The dimensions of the SOT-416 package are 1.7 mm in length, 0.96 mm in width, and 0.8 mm in height.

The operating temperature range for this model is from -55°C to 150°C, suitable for harsh environments.

It has a maximum gate-source voltage rating of 20 V, which helps protect the device during operation.

The maximum drain-source resistance for this MOSFET is 12 Ω, which reduces power loss during operation.

This MOSFET is suitable for industrial electronics, power management circuits, automotive electronics, and general-purpose switching applications.

Yes, it is Pb Free and RoHS compliant, meeting current environmental standards.

This model supports surface mounting, which is ideal for compact PCB designs.

The typical forward voltage is 1.2 V, which contributes to low voltage drop operation in electronic circuits.

This model is an N-channel enhancement MOSFET, optimized for efficient switching applications.

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